From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad-flat no-leads packaged Gallium-Nitride low noise amplifier monolithic microwave integrated circuit

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buir.contributor.authorOsmanoğlu, Sinan
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidOsmanoğlu, Sinan|0000-0002-6947-0858
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epagee2859-14en_US
dc.citation.issueNumber5en_US
dc.citation.spagee2859-1en_US
dc.citation.volumeNumber34en_US
dc.contributor.authorOsmanoğlu, Sinan
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2022-02-15T10:08:56Z
dc.date.available2022-02-15T10:08:56Z
dc.date.issued2021-01-19
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThis paper describes an air cavity quad-flat no-leads (QFN) over-molded plastic packaged cascode broadband GaN LNA Monolithic Microwave Integrated Circuit (MMIC) with resistive feedback fabricated with 0.25 μm GaN HEMT technology. The single stage QFN packaged GaN LNA MMIC achieves a bandwidth of 0.03–2.6 GHz with a typical gain of 11.5 dB and less than 1.5 dB noise figure. The low noise amplifier (LNA) design is based on a model of a concept transistor, the cascode transistor used in the design, that has not been fabricated previously. The concept transistor is fabricated for the first time along with the GaN LNA MMIC. The fabricated GaN LNA MMIC is housed in a 12-lead 3 × 3 mm2 air cavity QFN over-molded plastic package and mounted on an application board. The measurements taken with the application board represent a good convergence with the design that is based on a concept transistor model. The measurement results and 50 Ω internal matching on both ports without the need for additional matching components make this LNA attractive for many applications.en_US
dc.embargo.release2022-01-19
dc.identifier.doi10.1002/jnm.2859en_US
dc.identifier.issn0894-3370
dc.identifier.urihttp://hdl.handle.net/11693/77367
dc.language.isoEnglishen_US
dc.publisherJohn Wiley & Sons Ltd.en_US
dc.relation.isversionofhttps://doi.org/10.1002/jnm.2859en_US
dc.source.titleInternational Journal of Numerical Modelling: Electronic Networks, Devices and Fieldsen_US
dc.subjectBroadbanden_US
dc.subjectFeedback amplifiersen_US
dc.subjectGaNen_US
dc.subjectLNAen_US
dc.subjectMMICen_US
dc.subjectNoise modelen_US
dc.titleFrom model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad-flat no-leads packaged Gallium-Nitride low noise amplifier monolithic microwave integrated circuiten_US
dc.typeArticleen_US

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