High-performance AlxGA1-xN-Based UV photodetectors for visible/solar-blind applications
buir.advisor | Özbay, Ekmel | |
dc.contributor.author | Bıyıklı, Necmi | |
dc.date.accessioned | 2016-07-01T11:00:22Z | |
dc.date.available | 2016-07-01T11:00:22Z | |
dc.date.issued | 2004 | |
dc.description | Cataloged from PDF version of article. | en_US |
dc.description.abstract | High-performance detection of ultraviolet (UV) radiation is of great importance for a wide range of applications including flame sensing, environmental (ozone layer) monitoring, detection of biological/chemical agents, missile early warning systems, and secure intersatellite communication systems. These applications require high-performance UV photodetectors with low dark current, high responsivity, high detectivity, and fast time response. The widebandgap AlxGa1−xN ternary alloy is well-suited as a photodetector material for operation in the wavelength range of 200 nm to 365 nm. Its outstanding material properties (direct bandgap, tunable cut-off, allows heterostructures, intrinsically solar-blind) make AlxGa1−xN suitable for a variety of harsh environments. If properly constructed, AlxGa1−xN-based photodetectors could offer significant advantages over the older photomultiplier tube (PMT) technology in terms of size, cost, robustness, complexity, dark current, bandwidth, and solar-blind operation. The motivation behind this work is the need for high-performance, solid-state UV photodetectors that can be cost-effectively manufactured into high-density arrays. We have designed, fabricated, and characterized several visible/solar-blind AlxGa1−xN photodiode samples. With solar-blind AlxGa1−xN photodiode samples, we achieved excellent device performance in almost all aspects. Very low dark currents were measured with heterostructure AlxGa1−xN Schottky and p-i-n samples. The extremely low leakage characteristics resulted in record detectivity and noise performance. Detectivity performance comparable to PMT detectivity was achieved. True solar-blind operation (sub-280 nm cut-off) with high visible rejection was demonstrated. In addition, we improved the bandwidth performance of AlxGa1−xN-based solar-blind photodetectors by over an order of magnitude. Solar-blind Schottky, p-i-n, and metal-semiconductor-metal photodiode samples exhibited very fast pulse response with multi-GHz bandwidths. | en_US |
dc.description.provenance | Made available in DSpace on 2016-07-01T11:00:22Z (GMT). No. of bitstreams: 1 0002550.pdf: 7580827 bytes, checksum: 95f7c150a72dfdb120c5081ecd32d899 (MD5) Previous issue date: 2004 | en |
dc.description.statementofresponsibility | Bıyıklı, Necmi | en_US |
dc.format.extent | xx, 156 leaves, illustrations | en_US |
dc.identifier.itemid | BILKUTUPB083039 | |
dc.identifier.uri | http://hdl.handle.net/11693/29487 | |
dc.language.iso | English | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | Detector | en_US |
dc.subject | High-Speed | en_US |
dc.subject | Bandwidth | en_US |
dc.subject | Detectivity | en_US |
dc.subject | Low-Noise | en_US |
dc.subject | Dark Current | en_US |
dc.subject | High-Performance | en_US |
dc.subject | Photodetector | en_US |
dc.subject | Metal-Semiconductor-Metal (MSM) Photodiode | en_US |
dc.subject | P-I-N Photodiode | en_US |
dc.subject | Schottky Photodiode | en_US |
dc.subject | Heterostructure | en_US |
dc.subject | Heterojunction | en_US |
dc.subject | Solar-Blind | en_US |
dc.subject | Visible-Blind | en_US |
dc.subject | Photodiode | en_US |
dc.subject | Wide-Bandgap | en_US |
dc.subject | AlGaN Alloy | en_US |
dc.subject | III-Nitride | en_US |
dc.subject | Ultraviolet | en_US |
dc.subject.lcc | TK8304 .B59 2004 | en_US |
dc.subject.lcsh | Photoelectronic devices. | en_US |
dc.title | High-performance AlxGA1-xN-Based UV photodetectors for visible/solar-blind applications | en_US |
dc.type | Thesis | en_US |
thesis.degree.discipline | Electrical and Electronic Engineering | |
thesis.degree.grantor | Bilkent University | |
thesis.degree.level | Doctoral | |
thesis.degree.name | Ph.D. (Doctor of Philosophy) |
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