Investigation of AlGaN buffer layers on sapphire grown by MOVPE

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buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage190en_US
dc.citation.spage183en_US
dc.citation.volumeNumber5366en_US
dc.contributor.authorVan Gemmern, P.en_US
dc.contributor.authorDikme, Y.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKalisch, H.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorJansen, R. H.en_US
dc.contributor.authorHeuken, M.en_US
dc.coverage.spatialSan Jose, California, United Statesen_US
dc.date.accessioned2016-02-08T11:53:53Zen_US
dc.date.available2016-02-08T11:53:53Zen_US
dc.date.issued2004en_US
dc.departmentDepartment of Physicsen_US
dc.descriptionDate of Conference: 26-29 January 2004en_US
dc.descriptionConference Name: SPIE Integrated Optoelectronic Devices, 2004en_US
dc.description.abstractIn this work, AlGaN layers were grown on sapphire by metal-organic vapor phase epitaxy (MOVPE) on (0001)-oriented sapphire substrates, with the intention to investigate the effect of varying Al/MO and V/III ratios on the Al incorporation into the AlGaN layers. The parameters Al/MO and V/III describe the proportions of source material inside the reactor. With the help of optical transmission measurements, characteristic cut-off wavelengths of the Al xGa(1-x)N layers were determined. These wavelengths were used to calculate the Al content x of the layers, leading to values between 26.6% and 52.1%. Using the two process parameters Al/MO and V/III as input and the Al content of the AlGaN layers as a response variable, the experimental results were further investigated with the help of the software STATGRAPHICS. An estimated response surface for the variable x was generated. It was found that the Al incorporation is only tunable within a wide range for high V/III ratios of about 900. For constant Al/MO ratios and varying V/III ratios, two different growth characteristics were observed at high and low Al/MO values. This behavior is ascribed to the superposition of two oppositional effects.en_US
dc.identifier.doi10.1117/12.529952en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11693/27453
dc.language.isoEnglishen_US
dc.publisherSPIEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.529952en_US
dc.source.titleProceedings of SPIE Vol. 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIIIen_US
dc.subjectAl/MO ratioen_US
dc.subjectAlGaNen_US
dc.subjectMOVPEen_US
dc.subjectSapphireen_US
dc.subjectV/III ratioen_US
dc.subjectElectric breakdownen_US
dc.subjectElectric reactorsen_US
dc.subjectLight transmissionen_US
dc.subjectMetallorganic vapor phase epitaxyen_US
dc.subjectOptical fibersen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectPhotoconducting materialsen_US
dc.titleInvestigation of AlGaN buffer layers on sapphire grown by MOVPEen_US
dc.typeConference Paperen_US

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