Suppression of thermoelectric Thomson effect in silicon microwires under large electrical bias and implications for phase-change memory devices

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dc.citation.issueNumber23en_US
dc.citation.volumeNumber116en_US
dc.contributor.authorBakan G.en_US
dc.contributor.authorGokirmak, A.en_US
dc.contributor.authorSilva H.en_US
dc.date.accessioned2016-02-08T11:01:51Z
dc.date.available2016-02-08T11:01:51Z
dc.date.issued2014en_US
dc.departmentDepartment of Computer Engineeringen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractWe have observed how thermoelectric effects that result in asymmetric melting of silicon wires are suppressed for increasing electric current density (J). The experimental results are investigated using numerical modeling of the self-heating process, which elucidates the relative contributions of the asymmetric thermoelectric Thomson heat (∼J) and symmetric Joule heating (∼J2) that lead to symmetric heating for higher current levels. These results are applied in modeling of the self-heating process in phase-change memory devices. While, phase-change memory devices show a clearly preferred operation polarity due to thermoelectric effects, nearly symmetric operation can be achieved with higher amplitude and shorter current pulses, which can lead to design of improved polarity-invariant memory circuitry. © 2014 AIP Publishing LLC.en_US
dc.identifier.doi10.1063/1.4904746en_US
dc.identifier.issn218979
dc.identifier.urihttp://hdl.handle.net/11693/26580
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4904746en_US
dc.source.titleJournal of Applied Physicsen_US
dc.subjectHeatingen_US
dc.subjectSiliconen_US
dc.subjectThermoelectricityen_US
dc.subjectCurrent levelsen_US
dc.subjectCurrent pulseen_US
dc.subjectElectrical biasen_US
dc.subjectMicro wireen_US
dc.subjectRelative contributionen_US
dc.subjectSelf-heatingen_US
dc.subjectSilicon wiresen_US
dc.subjectThomson effectsen_US
dc.subjectPhase change memoryen_US
dc.titleSuppression of thermoelectric Thomson effect in silicon microwires under large electrical bias and implications for phase-change memory devicesen_US
dc.typeArticleen_US

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