Optimization of the annealed proton exchange method with controlled annealing for multifunctional integrated optical chip production

buir.contributor.authorAsık, Fatma Yasemin
buir.contributor.authorGökkavas, Mutlu
buir.contributor.authorÖztekin, Evren
buir.contributor.authorKaragöz, Ercan
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidAsık, Fatma Yasemin|0000-0001-5309-1397
buir.contributor.orcidGökkavas, Mutlu | 0000-0002-9244-4201
buir.contributor.orcidÖztekin, Evren |0000-0003-4411-7852
buir.contributor.orcidÖztekin, Evren | 0000-0002-3352-7752
buir.contributor.orcidÖzbay, Ekmel |0000-0003-2953-1828
dc.citation.epage8903en_US
dc.citation.issueNumber30en_US
dc.citation.spage8898en_US
dc.citation.volumeNumber61en_US
dc.contributor.authorAsık, Fatma Yasemin
dc.contributor.authorGökkavas, Mutlu
dc.contributor.authorÖztekin, Evren
dc.contributor.authorKaragöz, Ercan
dc.contributor.authorCeylan, Abdullah
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2023-02-21T06:18:48Z
dc.date.available2023-02-21T06:18:48Z
dc.date.issued2022-10-20
dc.description.abstractThe main objective of our studyis to develop a new approach to the annealed proton exchange (APE) method for the fabrication of the multifunctional integrated optical chip (MIOC) used in fiber-optic gyro systems and to eliminate the loss of time and material, especially in mass production applications. In this work, self-polarized waveguides, which are the basic components of a MIOC device, were produced by the APE method and studied. With the developed method, controlled annealing trials have been carried out from a certain region on the LiNbO3 substrate used in waveguide production, and the annealing time specific to the annealing process was determined. By utilizing a special setup for the hot acid process, the proton exchange process was accomplished without a sudden temperature change of the substrate. Using prism coupling measurements of the fabricated waveguides, annealing times were determined to obtain index change values suitable for 45%–50% optical throughput. Mode profiles of devices with high optical throughput that were produced by the proposed method were measured, and it was seen that devices from different proton exchange runs had similar profiles. As a result, many undamaged substrates were fabricated, and their optical quality was found to be within the expected values.en_US
dc.description.provenanceSubmitted by Mandana Moftakhari (mandana.mir@bilkent.edu.tr) on 2023-02-21T06:18:48Z No. of bitstreams: 1 Optimization_of_the_annealed_proton_exchange_method_with_controlled_annealing_for_multifunctional_integrated_optical_chip_production.pdf: 19304651 bytes, checksum: 47ff5dedaa6c6e582d7b6a9be31604fd (MD5)en
dc.description.provenanceMade available in DSpace on 2023-02-21T06:18:48Z (GMT). No. of bitstreams: 1 Optimization_of_the_annealed_proton_exchange_method_with_controlled_annealing_for_multifunctional_integrated_optical_chip_production.pdf: 19304651 bytes, checksum: 47ff5dedaa6c6e582d7b6a9be31604fd (MD5) Previous issue date: 2022-10-20en
dc.identifier.doi10.1364/AO.469479en_US
dc.identifier.eissn2155-3165
dc.identifier.issn1559-128X
dc.identifier.urihttp://hdl.handle.net/11693/111557
dc.language.isoEnglishen_US
dc.publisherOpticaen_US
dc.relation.isversionofhttps://doi.org/10.1364/AO.469479en_US
dc.source.titleApplied Opticsen_US
dc.titleOptimization of the annealed proton exchange method with controlled annealing for multifunctional integrated optical chip productionen_US
dc.typeArticleen_US

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