Theory of Schottky barrier and metallization
| buir.contributor.author | Çıracı, Salim | |
| buir.contributor.orcid | Çıracı, Salim|0000-0001-8023-9860 | |
| dc.citation.epage | 361 | en_US |
| dc.citation.issueNumber | 4 | en_US |
| dc.citation.spage | 289 | en_US |
| dc.citation.volumeNumber | 36 | en_US |
| dc.contributor.author | Batra, Inder P. | en_US |
| dc.contributor.author | Tekman, Erkan | en_US |
| dc.contributor.author | Çıracı, Salim | en_US |
| dc.date.accessioned | 2018-04-12T13:44:50Z | |
| dc.date.available | 2018-04-12T13:44:50Z | |
| dc.date.issued | 1991 | en_US |
| dc.department | Department of Physics | en_US |
| dc.description.abstract | The formation of the rectifying Schottky barrier on metal-semiconductor interfaces is one of the longest standing problems of solid-state physics. We present a review of the models and theories for Schottky barrier. Two important examples of metal-semiconductor interfaces, namely those containing simple and alkali metals, are analyzed in order to evaluate these models and theories in the light of ab-initio calculations. © 1991. | en_US |
| dc.identifier.doi | 10.1016/0079-6816(91)90014-U | en_US |
| dc.identifier.issn | 0079-6816 | |
| dc.identifier.uri | http://hdl.handle.net/11693/38118 | |
| dc.language.iso | English | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1016/0079-6816(91)90014-U | en_US |
| dc.source.title | Progress in Surface Science | en_US |
| dc.title | Theory of Schottky barrier and metallization | en_US |
| dc.type | Review | en_US |
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