Resonant Raman scattering near the free-to-bound transition in undoped p-GaSe

dc.citation.epage	1398	en_US
dc.citation.issueNumber	12	en_US
dc.citation.spage	1393	en_US
dc.citation.volumeNumber	36	en_US
dc.contributor.author	Gasanly, N. M.	en_US
dc.contributor.author	Aydınlı, A.	en_US
dc.contributor.author	Özkan, H.	en_US
dc.date.accessioned	2016-02-08T10:34:03Z
dc.date.available	2016-02-08T10:34:03Z
dc.date.issued	2001	en_US
dc.department	Department of Physics	en_US
dc.description.abstract	Raman spectra of GaSe layered crystal have been measured using a He-Ne laser and temperature tuning the free-to-bound gap in the range 10-290 K. Resonance enhancement of E’’(2) mode has been observed for both incident and scattered photon energies equal to the free-to-bound transition energy.	en_US
dc.identifier.doi	10.1002/1521-4079(200112)36:12<1393	en_US
dc.identifier.issn	0232-1300
dc.identifier.uri	http://hdl.handle.net/11693/24764
dc.language.iso	English	en_US
dc.publisher	Wiley	en_US
dc.relation.isversionof	http://dx.doi.org/10.1002/1521-4079(200112)36:12<1393	en_US
dc.source.title	Crystal Research and Technology	en_US
dc.subject	GaSe	en_US
dc.subject	Layered crystals	en_US
dc.subject	Semiconductor compounds	en_US
dc.subject	Electron transitions	en_US
dc.subject	Helium neon lasers	en_US
dc.subject	Photons	en_US
dc.subject	Raman scattering	en_US
dc.subject	Resonance	en_US
dc.subject	Spectrum analysis	en_US
dc.subject	Synthesis (chemical)	en_US
dc.subject	Resonant Raman scattering (RRS)	en_US
dc.subject	Polycrystals	en_US
dc.title	Resonant Raman scattering near the free-to-bound transition in undoped p-GaSe	en_US
dc.type	Article	en_US

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