Comparative study of screened interlayer interactions in the Coulomb drag effect in bilayer electron systems

buir.contributor.authorTanatar, Bilal
buir.contributor.orcidTanatar, Bilal|0000-0002-5246-0119
dc.citation.epage115301-10en_US
dc.citation.issueNumber11en_US
dc.citation.spage115301-1en_US
dc.citation.volumeNumber77en_US
dc.contributor.authorAsgari, R.en_US
dc.contributor.authorTanatar, Bilalen_US
dc.contributor.authorDavoudi, B.en_US
dc.date.accessioned2016-02-08T10:09:53Z
dc.date.available2016-02-08T10:09:53Z
dc.date.issued2008en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractCoulomb drag experiments in which the interlayer resistivity is measured are important as they provide information on the Coulomb interactions in bilayer systems. When the layer densities are low correlation effects become significant to account for the quantitative description of experimental results. We investigate systematically various models of effective interlayer interactions in a bilayer system and compare our results with recent experiments. In the low density regime, the correlation effects are included via the intra- and interlayer local-field corrections. We employ several theoretical approaches to construct static local-field corrections. Our comparative study demonstrates the importance of including the correlation effects accurately in the calculation of drag resistivity. Recent experiments performed at low layer densities are adequately described by effective interlayer interactions incorporating static correlations.en_US
dc.identifier.doi10.1103/PhysRevB.77.115301en_US
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/11693/23173
dc.language.isoEnglishen_US
dc.publisherThe American Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.77.115301en_US
dc.source.titlePhysical Review B - Condensed Matter and Materials Physicsen_US
dc.titleComparative study of screened interlayer interactions in the Coulomb drag effect in bilayer electron systemsen_US
dc.typeArticleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
Auger_recombination_and_carrier_multiplication_in_embedded_silicon_and_germanium_nanocrystals.pdf
Size:
237.22 KB
Format:
Adobe Portable Document Format
Description:
Full printable version