Absence of metallicity in Cs-GaAs(110): A Hubbard-model study
buir.contributor.author | Çıracı, Salim | |
buir.contributor.orcid | Çıracı, Salim|0000-0001-8023-9860 | |
dc.citation.epage | 16394 | en_US |
dc.citation.issueNumber | 24 | en_US |
dc.citation.spage | 16391 | en_US |
dc.citation.volumeNumber | 47 | en_US |
dc.contributor.author | Gedik, Z. | en_US |
dc.contributor.author | Çıracı, Salim | en_US |
dc.contributor.author | Batra, I. P. | en_US |
dc.date.accessioned | 2016-02-08T10:54:35Z | |
dc.date.available | 2016-02-08T10:54:35Z | |
dc.date.issued | 1993 | en_US |
dc.department | Department of Physics | en_US |
dc.description.abstract | Using an approximate solution of the Hubbard-model Hamiltonian, we are able to establish that the Cs-GaAs(110) system becomes a Mott insulator at submonolayer Cs coverages. We also provide a consistent interpretation of electron-energy-loss and scanning-tunneling-spectroscopies data. The correlation effects are important for this system with an estimated correlation energy of 0.4 eV. © 1993 The American Physical Society. | en_US |
dc.identifier.doi | 10.1103/PhysRevB.47.16391 | en_US |
dc.identifier.issn | 0163-1829 | |
dc.identifier.uri | http://hdl.handle.net/11693/26071 | |
dc.language.iso | English | en_US |
dc.publisher | American Physical Society | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1103/PhysRevB.47.16391 | en_US |
dc.source.title | Physical Review B | en_US |
dc.title | Absence of metallicity in Cs-GaAs(110): A Hubbard-model study | en_US |
dc.type | Article | en_US |
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