A large-signal behavioural modeling approach of GaN HEMTs for power amplifier design

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buir.contributor.authorYegin, Mustafa Oğuz
buir.contributor.authorGurdal, Armagan
buir.contributor.authorOzipek, Ulas
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidYegin, Mustafa Oğuz|0000-0002-7912-8415
buir.contributor.orcidGurdal, Armagan|0000-0002-8008-7438
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage232en_US
dc.citation.spage229en_US
dc.contributor.authorYegin, Mustafa Oğuz
dc.contributor.authorGurdal, Armagan
dc.contributor.authorOzipek, Ulas
dc.contributor.authorÖzbay, Ekmel
dc.coverage.spatialUtrecht, Hollanden_US
dc.date.accessioned2022-02-23T11:22:42Z
dc.date.available2022-02-23T11:22:42Z
dc.date.issued2021-01-10
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionConference Name: Proceedings of the 15th European Microwave Integrated Circuits Conference Date of Conferenceen_US
dc.description.abstractA new method to simulate the large-signal behaviour of GaN HEMTs is presented along with the two 15W X-band MMIC Class AB power amplifier (PA) designs using the same methodology. Proposed modeling approach is based on curve-fitting transistor performance parameters in the load impedance plane, while transistor’s behaviour in the source impedance space is calculated using a virtual source-pull technique. Good agreement with the results of two fabricated GaN PA MMICs demonstrate the accuracy of the method in simulating Pout , Gt and PAE of the amplifiers at any given compression level. This approach is distinguished from conventional modeling methods with its minimal measurement requirements, ease of model development, and generic nature while accurately predicting the large-signal response, thus is suitable to use for PA design, under the lack of a more comprehensive transistor model.en_US
dc.description.provenanceSubmitted by Müge Yılmaz (muge.yilmaz@bilkent.edu.tr) on 2022-02-23T11:22:42Z No. of bitstreams: 1 A_Large-signal_behavioural_modeling_approach_of_GaN_HEMTs_for_power_amplifier_design.pdf: 352831 bytes, checksum: 9d14d59901cadf7bfd9579f5ab691e26 (MD5)en
dc.description.provenanceMade available in DSpace on 2022-02-23T11:22:42Z (GMT). No. of bitstreams: 1 A_Large-signal_behavioural_modeling_approach_of_GaN_HEMTs_for_power_amplifier_design.pdf: 352831 bytes, checksum: 9d14d59901cadf7bfd9579f5ab691e26 (MD5) Previous issue date: 2021-01-10en
dc.identifier.isbn978-287487060-6
dc.identifier.urihttp://hdl.handle.net/11693/77582
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.source.titleProceedings of the 15th European Microwave Integrated Circuits Conferenceen_US
dc.subjectGaNen_US
dc.subjectLoad-pull measurementen_US
dc.subjectPower amplifiersen_US
dc.subjectLarge-signalen_US
dc.subjectCurve fittingen_US
dc.titleA large-signal behavioural modeling approach of GaN HEMTs for power amplifier designen_US
dc.typeConference Paperen_US

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