Controlled photoluminescence in amorphous-silicon-nitride microcavities

dc.citation.epage1390en_US
dc.citation.issueNumber10en_US
dc.citation.spage1388en_US
dc.citation.volumeNumber78en_US
dc.contributor.authorSerpengüzel, A.en_US
dc.contributor.authorTanriseven, S.en_US
dc.date.accessioned2016-02-08T10:35:43Z
dc.date.available2016-02-08T10:35:43Z
dc.date.issued2001en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractNarrow-band and enhanced photoluminescence have been observed in hydrogenated amorphous-silicon-nitride microcavities. The distributed Bragg reflectors were fabricated using alternating layers of hydrogenated amorphous-silicon nitride and hydrogenated amorphous-silicon oxide. The microcavity resonance wavelength was designed to be at the maximum of the bulk hydrogenated amorphous-silicon-nitride luminescence spectrum. At the microcavity resonance, the phololuminescence amplitude is enhanced, while the photoluminescence linewidth is reduced with respect to the bulk hydrogenated amorphous-silicon nitride. © 2001 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.1347022en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/24884
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.1347022en_US
dc.source.titleApplied Physics Lettersen_US
dc.titleControlled photoluminescence in amorphous-silicon-nitride microcavitiesen_US
dc.typeArticleen_US

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