Controlled photoluminescence in amorphous-silicon-nitride microcavities
dc.citation.epage | 1390 | en_US |
dc.citation.issueNumber | 10 | en_US |
dc.citation.spage | 1388 | en_US |
dc.citation.volumeNumber | 78 | en_US |
dc.contributor.author | Serpengüzel, A. | en_US |
dc.contributor.author | Tanriseven, S. | en_US |
dc.date.accessioned | 2016-02-08T10:35:43Z | |
dc.date.available | 2016-02-08T10:35:43Z | |
dc.date.issued | 2001 | en_US |
dc.department | Department of Physics | en_US |
dc.description.abstract | Narrow-band and enhanced photoluminescence have been observed in hydrogenated amorphous-silicon-nitride microcavities. The distributed Bragg reflectors were fabricated using alternating layers of hydrogenated amorphous-silicon nitride and hydrogenated amorphous-silicon oxide. The microcavity resonance wavelength was designed to be at the maximum of the bulk hydrogenated amorphous-silicon-nitride luminescence spectrum. At the microcavity resonance, the phololuminescence amplitude is enhanced, while the photoluminescence linewidth is reduced with respect to the bulk hydrogenated amorphous-silicon nitride. © 2001 American Institute of Physics. | en_US |
dc.identifier.doi | 10.1063/1.1347022 | en_US |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://hdl.handle.net/11693/24884 | |
dc.language.iso | English | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.1347022 | en_US |
dc.source.title | Applied Physics Letters | en_US |
dc.title | Controlled photoluminescence in amorphous-silicon-nitride microcavities | en_US |
dc.type | Article | en_US |
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