Observation of gate-tunable coherent perfect absorption of terahertz radiation in graphene

dc.citation.epage1535en_US
dc.citation.issueNumber9en_US
dc.citation.spage1531en_US
dc.citation.volumeNumber3en_US
dc.contributor.authorKakenov, N.en_US
dc.contributor.authorBalci, O.en_US
dc.contributor.authorTakan, T.en_US
dc.contributor.authorOzkan, V. A.en_US
dc.contributor.authorAltan, H.en_US
dc.contributor.authorKocabas, C.en_US
dc.date.accessioned2018-04-12T10:50:34Z
dc.date.available2018-04-12T10:50:34Z
dc.date.issued2016en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe report experimental observation of electrically tunable coherent perfect absorption (CPA) of terahertz (THz) radiation in graphene. We develop a reflection-type tunable THz cavity formed by a large-area graphene layer, a metallic reflective electrode, and an electrolytic medium in between. Ionic gating in the THz cavity allows us to tune the Fermi energy of graphene up to 1 eV and to achieve a critical coupling condition at 2.8 THz with absorption of 99%. With the enhanced THz absorption, we were able to measure the Fermi energy dependence of the transport scattering time of highly doped graphene. Furthermore, we demonstrate flexible active THz surfaces that yield large modulation in the THz reflectivity with low insertion losses. We anticipate that the gate-tunable CPA will lead to efficient active THz optoelectronics applications.en_US
dc.description.provenanceMade available in DSpace on 2018-04-12T10:50:34Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2016en
dc.identifier.doi10.1021/acsphotonics.6b00240en_US
dc.identifier.issn2330-4022
dc.identifier.urihttp://hdl.handle.net/11693/36717
dc.language.isoEnglishen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/acsphotonics.6b00240en_US
dc.source.titleACS Photonicsen_US
dc.subjectCoherent optical absorptionen_US
dc.subjectGate-tunableen_US
dc.subjectGrapheneen_US
dc.subjectIonic gatingen_US
dc.subjectTerahertzen_US
dc.subjectTHz optoelectronicsen_US
dc.subjectElectromagnetic wave absorptionen_US
dc.subjectFermi levelen_US
dc.subjectGrapheneen_US
dc.subjectLight absorptionen_US
dc.subjectReconfigurable hardwareen_US
dc.subjectCoherent perfect absorptionsen_US
dc.subjectCritical coupling conditionen_US
dc.subjectElectrically tunableen_US
dc.subjectGate-tunableen_US
dc.subjectIonic gatingen_US
dc.subjectLarge-area grapheneen_US
dc.subjectTera Hertzen_US
dc.subjectTransport scatteringen_US
dc.subjectTerahertz wavesen_US
dc.titleObservation of gate-tunable coherent perfect absorption of terahertz radiation in grapheneen_US
dc.typeArticleen_US

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