High-speed 1.3 μm GaAs internal photoemission resonant cavity enhanced photodetector

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buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage109en_US
dc.citation.spage108en_US
dc.contributor.authorKimukin, İbrahimen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKartaloğlu, Tolgaen_US
dc.contributor.authorAytür, Orhanen_US
dc.contributor.authorTuttle, G.en_US
dc.coverage.spatialRio Grande, Puerto Rico, USAen_US
dc.date.accessioned2016-02-08T11:58:15Zen_US
dc.date.available2016-02-08T11:58:15Zen_US
dc.date.issued2000en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionDate of Conference: 13-16 November 2000en_US
dc.descriptionConference Name: 13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000en_US
dc.description.abstractResonant cavity enhanced (RCE) photodetectors offer the possibility of overcoming the low quantum efficiency limitation of conventional photodetectors. The RCE detectors are based on the enhancement of the optical field within a Fabry-Perot resonator. The increased field allows the use of a thin absorbing layer, which minimizes the transit time of the photogenerated carriers without hampering the quantum efficiency. Recently, we fabricated high-speed RCE p-i-n and Schottky photodetectors, where a 90% quantum efficiency along with a 3-dB bandwidth of 50 GHz has been reported. We used the transfer matrix method to design the epilayer structure and to simulate the optical properties of the photodiode. The samples were fabricated by a microwave-compatible process and high-speed measurements were made with an optical parametric oscillator.en_US
dc.identifier.doi10.1109/LEOS.2000.890697en_US
dc.identifier.issn1092-8081en_US
dc.identifier.urihttp://hdl.handle.net/11693/27628en_US
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttps://doi.org/10.1109/LEOS.2000.890697en_US
dc.source.titleProceedings of the 13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000en_US
dc.subjectAvalanche diodesen_US
dc.subjectBandwidthen_US
dc.subjectComputer simulationen_US
dc.subjectFourier transformsen_US
dc.subjectOptical communicationen_US
dc.subjectPhotoemissionen_US
dc.subjectQuantum efficiencyen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectFabry-Perot resonatorsen_US
dc.subjectInternal photoemissionen_US
dc.subjectLaser timing jitteren_US
dc.subjectQuantum efficiency measurementen_US
dc.subjectResonant cavity enhanced photodetectoren_US
dc.subjectPhotodetectorsen_US
dc.titleHigh-speed 1.3 μm GaAs internal photoemission resonant cavity enhanced photodetectoren_US
dc.typeConference Paperen_US

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