Energy relaxation rates in AlInN/AlN/GaN heterostructures

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage2361en_US
dc.citation.issueNumber9en_US
dc.citation.spage2350en_US
dc.citation.volumeNumber41en_US
dc.contributor.authorTiras, E.en_US
dc.contributor.authorArdali, S.en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T12:01:07Z
dc.date.available2015-07-28T12:01:07Z
dc.date.issued2012-06-27en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractThe two-dimensional (2D) electron energy relaxation in Al0.83In0.17N/AlN/GaN heterostructures has been investigated experimentally. Shubnikov-de Haas (SdH) effect measurements were employed in the investigations. The electron temperature (T (e)) of hot electrons was obtained from the lattice temperature (T (L)) and the applied electric field dependencies of the amplitude of SdH oscillations. The experimental results for the electron temperature dependence of power loss are also compared with current theoretical models for power loss in 2D semiconductors. The power loss from the electrons was found to be proportional to (T (e) (3) - T (L) (3) ) for electron temperatures in the range 1.8 K < T (e) < 14 K, indicating that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. The effective mass and quantum lifetime of the 2D electrons have been determined from the temperature and magnetic field dependencies of the amplitude of SdH oscillations, respectively. The values obtained for quantum lifetime suggest that remote ionized impurity scattering is the dominant scattering mechanism in Al0.83In0.17N/AlN/GaN heterostructures.en_US
dc.identifier.doi10.1007/s11664-012-2158-7en_US
dc.identifier.eissn1543-186X
dc.identifier.issn0361-5235
dc.identifier.urihttp://hdl.handle.net/11693/12357
dc.language.isoEnglishen_US
dc.publisherSpringeren_US
dc.relation.isversionofhttp://dx.doi.org/ 10.1007/s11664-012-2158-7en_US
dc.source.titleJournal of Electronic Materialsen_US
dc.subjectGaN heterostructureen_US
dc.subjectElectron energy relaxationen_US
dc.subjectPower lossen_US
dc.subjectPhonon emissionen_US
dc.subjectShubnikov-de Haasen_US
dc.subjectHall Mobilityen_US
dc.titleEnergy relaxation rates in AlInN/AlN/GaN heterostructuresen_US
dc.typeArticleen_US

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