In this paper, we present the fabrication procedures as well as the preliminary experimental results of a novel method for significantly simplified deposition of charged nanoparticles at specific patterns based on focused ion beam (FIB) technology. The deposition method relies on the implantation of positive gallium ions on an insulated material which creates the basis for attracting the nanoparticles to the substrate. In order to substantiate the theory two patterns were generated on a silicon on insulator (SOI) chip with an upper layer of silicon of 200 nm. The two patterns are as follows: resolution target - consisting of six squares and 400 nm × 400 nm circular sinusoidal tunnel. In addition, we demonstrate the utilization and applicability of the aforementioned method in a tunable radiation nano device as well as show its experimental characterization.