Exchange-correlation effects in the impurity-limited mobility of GaAs quantum wires

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buir.contributor.authorTanatar, Bilal
buir.contributor.orcidTanatar, Bilal|0000-0002-5246-0119
dc.citation.epage564en_US
dc.citation.issueNumber4en_US
dc.citation.spage559en_US
dc.citation.volumeNumber23en_US
dc.contributor.authorTanatar, Bilalen_US
dc.date.accessioned2016-02-08T10:40:03Z
dc.date.available2016-02-08T10:40:03Z
dc.date.issued1999en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe study the many-body effects described by the local-field corrections on the mobility of quasi-one dimensional electron systems. The low temperature mobility due to remote-impurity doping and interface-roughness scattering is calculated within the relaxation time approximation. We find that correlation effects significantly reduce the mobility at low density.en_US
dc.identifier.issn1300-0101
dc.identifier.urihttp://hdl.handle.net/11693/25153
dc.language.isoEnglishen_US
dc.publisherSci Tech Res Counc Turkey, Ankara, Turkeyen_US
dc.source.titleTurkish Journal of Physicsen_US
dc.subjectApproximation theoryen_US
dc.subjectCarrier mobilityen_US
dc.subjectElectron scatteringen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectSemiconductor dopingen_US
dc.subjectSurface roughnessen_US
dc.subjectRemote-impurity dopingen_US
dc.subjectSemiconductor quantum wiresen_US
dc.titleExchange-correlation effects in the impurity-limited mobility of GaAs quantum wiresen_US
dc.typeArticleen_US

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