Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors

Simple item page
buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage1706en_US
dc.citation.issueNumber12en_US
dc.citation.spage1703en_US
dc.citation.volumeNumber14en_US
dc.contributor.authorKumar, M.en_US
dc.contributor.authorTekcan, B.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.date.accessioned2016-02-08T11:00:55Z
dc.date.available2016-02-08T11:00:55Z
dc.date.issued2014en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractA report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with atomic layer deposited (ALD) 5-nm-thick HfO2 insulating layer is presented. Very low dark current of 2.24 × 10-11 A and increased photo to dark current contrast ratio was achieved at 10 V. It was found that the dark current was drastically reduced by seven orders of magnitude at 10 V compared to samples without HfO2 insulating layer. The observed decrease in dark current is attributed to the large barrier height which is due to introduction of HfO2 insulating layer and the calculated barrier height was obtained as 0.95 eV. The peak responsivity of HfO2 inserted device was 0.44 mA/W at bias voltage of 15 V.en_US
dc.identifier.doi10.1016/j.cap.2014.10.001en_US
dc.identifier.issn1567-1739
dc.identifier.urihttp://hdl.handle.net/11693/26517
dc.language.isoEnglishen_US
dc.publisherElsevier BVen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.cap.2014.10.001en_US
dc.source.titleCurrent Applied Physics: physics, chemistry and materials scienceen_US
dc.subjectAtomic layer deposited HfO2en_US
dc.subjectAtomic layer depositeden_US
dc.subjectGaNen_US
dc.subjectMetal-insulator-semiconductorsen_US
dc.subjectUltra-violet photodetectorsen_US
dc.subjectUV photodetectorsen_US
dc.titleAtomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectorsen_US
dc.typeArticleen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors.pdf
Size:
574.18 KB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download

Collections

Department of Electrical and Electronics Engineering