Improved robustness, stability and linearity in GaN based high electron mobility transistors for 5G applications

Simple item page
buir.advisorÖzbay, Ekmel
dc.contributor.authorOdabaşı, Oğuz
dc.date.accessioned2021-08-05T05:32:56Z
dc.date.available2021-08-05T05:32:56Z
dc.date.copyright2021-06
dc.date.issued2021-06
dc.date.submitted2021-07-14
dc.descriptionCataloged from PDF version of article.en_US
dc.descriptionThesis (Master's): Bilkent University, Department of Electrical and Electronics Engineering, İhsan Doğramacı Bilkent University, 2021.en_US
dc.descriptionIncludes bibliographical references (leaves 134-148).en_US
dc.description.abstract5G technology requires high frequency and high power transistors. GaN-based high-electron-mobility transistors (HEMTs) are promising candidates to answer these needs. Although it is studied nearly for 30 years, there are still problems with this technology such as high non-linearity, unstable behavior and uncertain-ties in lifetime estimations, to take the lead. Some of the most important problems of GaN HEMT technology are studied elaborately in this thesis. Electro-thermal simulations are used to analyze the heating behavior of HEMT power devices under operation and a new more re-alistic model is developed. Fabrication of devices is governed and highly linear transistors with 6.4 V gate voltage span are achieved by using fin-like structures. 6.5 dB improvement in OIP3 is obtained compared to conventional devices. Fi-nally, the stability and robustness of these devices are studied in the view of passivation. Significant improvement in surface morphology, DC operation, long-term stability, pulsed IV performance, and forward gate bias stress durability has been demonstrated. Findings will help the implementation of GaN HEMT devices into 5G applications.en_US
dc.description.provenanceSubmitted by Betül Özen (ozen@bilkent.edu.tr) on 2021-08-05T05:32:56Z No. of bitstreams: 1 Odabasi_MS_Thesis_Signed.pdf: 26592543 bytes, checksum: b338453e2f6aae3e388049b134106f84 (MD5)en
dc.description.provenanceMade available in DSpace on 2021-08-05T05:32:56Z (GMT). No. of bitstreams: 1 Odabasi_MS_Thesis_Signed.pdf: 26592543 bytes, checksum: b338453e2f6aae3e388049b134106f84 (MD5) Previous issue date: 2021-06en
dc.description.statementofresponsibilityby Oğuz Odabaşıen_US
dc.embargo.release2022-01-13
dc.format.extentxvii, 148 leaves : illustrations, charts ; 30 cm.en_US
dc.identifier.itemidB155355
dc.identifier.urihttp://hdl.handle.net/11693/76406
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectGaN HEMTen_US
dc.subjectLinearityen_US
dc.subjectStabilityen_US
dc.subjectElectro-thermal simulationsen_US
dc.subjectTri-gateen_US
dc.subjectFinHEMTen_US
dc.titleImproved robustness, stability and linearity in GaN based high electron mobility transistors for 5G applicationsen_US
dc.title.alternative5G uygulamaları için GaN tabanlı yüksek elektron mobiliteli transistörlerde geliştirilmiş sağlamlık, kararlılık, ve doğrusallıken_US
dc.typeThesisen_US
thesis.degree.disciplineElectrical and Electronic Engineering
thesis.degree.grantorBilkent University
thesis.degree.levelMaster's
thesis.degree.nameMS (Master of Science)

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Odabasi_MS_Thesis_Signed.pdf
Size:
25.36 MB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.69 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Graduate School of Engineering and Science