Improved robustness, stability and linearity in GaN based high electron mobility transistors for 5G applications
buir.advisor | Özbay, Ekmel | |
dc.contributor.author | Odabaşı, Oğuz | |
dc.date.accessioned | 2021-08-05T05:32:56Z | |
dc.date.available | 2021-08-05T05:32:56Z | |
dc.date.copyright | 2021-06 | |
dc.date.issued | 2021-06 | |
dc.date.submitted | 2021-07-14 | |
dc.description | Cataloged from PDF version of article. | en_US |
dc.description | Thesis (Master's): Bilkent University, Department of Electrical and Electronics Engineering, İhsan Doğramacı Bilkent University, 2021. | en_US |
dc.description | Includes bibliographical references (leaves 134-148). | en_US |
dc.description.abstract | 5G technology requires high frequency and high power transistors. GaN-based high-electron-mobility transistors (HEMTs) are promising candidates to answer these needs. Although it is studied nearly for 30 years, there are still problems with this technology such as high non-linearity, unstable behavior and uncertain-ties in lifetime estimations, to take the lead. Some of the most important problems of GaN HEMT technology are studied elaborately in this thesis. Electro-thermal simulations are used to analyze the heating behavior of HEMT power devices under operation and a new more re-alistic model is developed. Fabrication of devices is governed and highly linear transistors with 6.4 V gate voltage span are achieved by using fin-like structures. 6.5 dB improvement in OIP3 is obtained compared to conventional devices. Fi-nally, the stability and robustness of these devices are studied in the view of passivation. Significant improvement in surface morphology, DC operation, long-term stability, pulsed IV performance, and forward gate bias stress durability has been demonstrated. Findings will help the implementation of GaN HEMT devices into 5G applications. | en_US |
dc.description.provenance | Submitted by Betül Özen (ozen@bilkent.edu.tr) on 2021-08-05T05:32:56Z No. of bitstreams: 1 Odabasi_MS_Thesis_Signed.pdf: 26592543 bytes, checksum: b338453e2f6aae3e388049b134106f84 (MD5) | en |
dc.description.provenance | Made available in DSpace on 2021-08-05T05:32:56Z (GMT). No. of bitstreams: 1 Odabasi_MS_Thesis_Signed.pdf: 26592543 bytes, checksum: b338453e2f6aae3e388049b134106f84 (MD5) Previous issue date: 2021-06 | en |
dc.description.statementofresponsibility | by Oğuz Odabaşı | en_US |
dc.embargo.release | 2022-01-13 | |
dc.format.extent | xvii, 148 leaves : illustrations, charts ; 30 cm. | en_US |
dc.identifier.itemid | B155355 | |
dc.identifier.uri | http://hdl.handle.net/11693/76406 | |
dc.language.iso | English | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | GaN HEMT | en_US |
dc.subject | Linearity | en_US |
dc.subject | Stability | en_US |
dc.subject | Electro-thermal simulations | en_US |
dc.subject | Tri-gate | en_US |
dc.subject | FinHEMT | en_US |
dc.title | Improved robustness, stability and linearity in GaN based high electron mobility transistors for 5G applications | en_US |
dc.title.alternative | 5G uygulamaları için GaN tabanlı yüksek elektron mobiliteli transistörlerde geliştirilmiş sağlamlık, kararlılık, ve doğrusallık | en_US |
dc.type | Thesis | en_US |
thesis.degree.discipline | Electrical and Electronic Engineering | |
thesis.degree.grantor | Bilkent University | |
thesis.degree.level | Master's | |
thesis.degree.name | MS (Master of Science) |
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