Enhanced tunability of V-shaped plasmonic structures using ionic liquid gating and graphene

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage520en_US
dc.citation.spage515en_US
dc.citation.volumeNumber108en_US
dc.contributor.authorOzdemir, O.en_US
dc.contributor.authorAygar, A. M.en_US
dc.contributor.authorBalci, O.en_US
dc.contributor.authorKocabas, C.en_US
dc.contributor.authorCaglayan, H.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2018-04-12T10:55:58Z
dc.date.available2018-04-12T10:55:58Z
dc.date.issued2016en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractGraphene is a strong candidate for active optoelectronic devices because of its electrostatically tunable optical response. Current substrate back-gating methods are unable to sustain high fields through graphene unless a high gate voltage is applied. In order to solve this problem, ionic liquid gating is used which allows substrate front side gating, thus eliminating the major loss factors such as a dielectric layer and a thick substrate layer. On the other hand, due to its two dimensional nature, graphene interacts weakly with light and this interaction limits its efficiency in optoelectronic devices. However, V-shaped plasmonic antennas can be used to enhance the incident electric field intensity and confine the electric field near graphene thus allowing further interaction with graphene. Combining V-shaped nanoantennas with the tunable response of graphene, the operation wavelength of the devices that utilize V-shaped antennas can be tuned in situ. In the present paper, we demonstrate a graphene-based device with ionic liquid gating and V- shaped plasmonic antennas to both enhance and more effectively tune the total optical response. We are able to tune the transmission response of the device for up to 389 nm by changing the gate voltage by 3.8 V in the mid-infrared regime.en_US
dc.identifier.doi10.1016/j.carbon.2016.07.049en_US
dc.identifier.issn0008-6223
dc.identifier.urihttp://hdl.handle.net/11693/36869
dc.language.isoEnglishen_US
dc.publisherElsevier Ltden_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.carbon.2016.07.049en_US
dc.source.titleCarbonen_US
dc.subjectAntennasen_US
dc.subjectElectric fieldsen_US
dc.subjectGrapheneen_US
dc.subjectIonic liquidsen_US
dc.subjectLiquidsen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectPlasmonsen_US
dc.subjectReconfigurable hardwareen_US
dc.subjectThreshold voltageen_US
dc.subjectDielectric layeren_US
dc.subjectElectric field intensitiesen_US
dc.subjectIts efficienciesen_US
dc.subjectOperation wavelengthen_US
dc.subjectOptical responseen_US
dc.subjectThick substratesen_US
dc.subjectTransmission responseen_US
dc.subjectTwo dimensional natureen_US
dc.subjectGraphene devicesen_US
dc.titleEnhanced tunability of V-shaped plasmonic structures using ionic liquid gating and grapheneen_US
dc.typeArticleen_US

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