Low temperature photoluminescence spectra of InS single crystals

buir.contributor.authorAydınlı, Atilla
dc.citation.epage799en_US
dc.citation.issueNumber11en_US
dc.citation.spage797en_US
dc.citation.volumeNumber101en_US
dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2015-07-28T11:56:10Z
dc.date.available2015-07-28T11:56:10Z
dc.date.issued1997-03en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractPhotoluminescence (PL) spectra of InS were investigated in the wavelength region 477.5–860 nm and in the temperature range 8.5–293 K. We observed three PL bands centered at 605 nm (A-band), 626 nm (B-band) and 820 nm (C-band). The A- and B-bands are due to radiative transitions from the donor level at 0.01 eV below the bottom of the conduction band to the valence band and from the donor level at 0.06 eV below the bottom of the conduction band to the acceptor level 0.12 eV above the top of the valence band, respectively. The proposed energy-level scheme allows us to interpret the recombination processes in InS single crystals. Copyright © 1997 Published by Elsevier Ltd.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T11:56:10Z (GMT). No. of bitstreams: 1 10.1016-S0038-1098(96)00704-1.pdf: 280460 bytes, checksum: 8eb5ed7ed9f75ed74ab996383b1ff550 (MD5)en
dc.identifier.doi10.1016/S0038-1098(96)00704-1en_US
dc.identifier.issn0038-1098
dc.identifier.urihttp://hdl.handle.net/11693/10879
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/S0038-1098(96)00704-1en_US
dc.source.titleSolid State Communicationsen_US
dc.subjectA. Semiconductorsen_US
dc.subjectD. Optical propertiesen_US
dc.subjectE. Luminescenceen_US
dc.titleLow temperature photoluminescence spectra of InS single crystalsen_US
dc.typeArticleen_US

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