X-band cascode LNA with bias-invariant noise figure using 0.15 µm GaN-on-SiC technology

buir.contributor.orcidAras, Yunus Erdem|0000-0001-8291-8509en_US
buir.contributor.orcidZafar, Salahuddin|0000-0002-5212-9602en_US
buir.contributor.orcidAkoğlu, Büşra Çankaya|0000-0001-5680-1649en_US
buir.contributor.orcidTendürüs, Gizem|0000-0003-2070-1501en_US
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage[4]en_US
dc.citation.spage[1]en_US
dc.contributor.authorNawaz, Muhammad Imran
dc.contributor.authorAras, Yunus Erdem
dc.contributor.authorZafar, Salahuddin
dc.contributor.authorAkoğlu, Büşra Çankaya
dc.contributor.authorTendürüs, Gizem
dc.contributor.authorÖzbay, Ekmel
dc.contributor.bilkentauthorNawaz, Muhammad Imran
dc.contributor.bilkentauthorAras, Yunus Erdem
dc.contributor.bilkentauthorZafar, Salahuddin
dc.contributor.bilkentauthorAkoğlu, Büşra Çankaya
dc.contributor.bilkentauthorTendürüs, Gizem
dc.contributor.bilkentauthorÖzbay, Ekmel
dc.coverage.spatialPizzo Calabro, Italyen_US
dc.date.accessioned2023-02-14T06:33:42Z
dc.date.available2023-02-14T06:33:42Z
dc.date.issued2022-07-18
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionConference Name: 2022 Microwave Mediterranean Symposium (MMS)en_US
dc.descriptionDate of Conference: 09-13 May 2022en_US
dc.description.abstractCascode HEMTs exhibit better stability and broad bandwidths performance as compared with common source HEMTs. This paper presents the design of a single stage broadband low noise amplifier based upon 0.15 um GaN HEMT technology in the frequency range of 8 – 12 GHz. Cascode HEMT with inductive source degeneration is utilized. All the design work is done using PathWave Advanced Design System. The LNA provides 9.5 to 10.6 dB with input return loss better than 10 dB and output return loss better than 8 dB in the whole band. The noise figure of the amplifier is below 1.9 dB. The linearity parameters P1dB and OIP3 are greater than equal to 16 dBm and 28 dBm respectively within operating bandwidth. The noise figure of the amplifier is fairly constant over 30 mA to 60 mA bias currents and 9 V – 18 V operating bias voltage. This is a unique finding which is being reported for the first time to the best of authors' knowledge.en_US
dc.identifier.doi10.1109/MMS55062.2022.9825619en_US
dc.identifier.eisbn978-1-6654-7110-7
dc.identifier.eissn2157-9830
dc.identifier.issn2157-9822
dc.identifier.urihttp://hdl.handle.net/11693/111225
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttps://www.doi.org/10.1109/MMS55062.2022.9825619en_US
dc.source.titleMicrowave Mediterranean Symposium (MMS)en_US
dc.subjectGaN HEMTen_US
dc.subjectLow noise amplifieren_US
dc.subjectX-banden_US
dc.subjectCascodeen_US
dc.subjectSource degenerationen_US
dc.subjectBias-invarianten_US
dc.titleX-band cascode LNA with bias-invariant noise figure using 0.15 µm GaN-on-SiC technologyen_US
dc.typeConference Paperen_US
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