AlGaN quadruple-band photodetectors

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buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage366en_US
dc.citation.spage365en_US
dc.contributor.authorGökkavas, Mutluen_US
dc.contributor.authorBütün, Serkanen_US
dc.contributor.authorCaban, P.en_US
dc.contributor.authorStrupinski, W.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialBelek, Antalya, Turkeyen_US
dc.date.accessioned2016-02-08T12:24:57Z
dc.date.available2016-02-08T12:24:57Z
dc.date.issued2009en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionDate of Conference: 4-8 October 2009en_US
dc.descriptionConference Name: LEOS’09 22nd Annual Meeting of IEEE Photonics Society, LEOS 2009en_US
dc.description.abstractQuadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 9.98 nm.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:24:57Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2009en
dc.identifier.doi10.1109/LEOS.2009.5343098en_US
dc.identifier.issn1092-8081en_US
dc.identifier.urihttp://hdl.handle.net/11693/28605
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/LEOS.2009.5343098en_US
dc.source.titleProceedings of the LEOS’09 22nd Annual Meeting of IEEE Photonics Society, LEOS 2009en_US
dc.subjectAlGaNen_US
dc.subjectBack-illuminateden_US
dc.subjectMetal semiconductor metal photodetectoren_US
dc.subjectSpectral responsivityen_US
dc.subjectHeterojunctionsen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectPhotodetectorsen_US
dc.titleAlGaN quadruple-band photodetectorsen_US
dc.typeConference Paperen_US

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