Modification of electronic structure, magnetic structure, and topological phase of bismuthene by point defects

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buir.contributor.authorÇıracı, Salim
buir.contributor.orcidÇıracı, Salim|0000-0001-8023-9860
dc.citation.issueNumber24en_US
dc.citation.volumeNumber96en_US
dc.contributor.authorKadioglu, Y.en_US
dc.contributor.authorKilic, S. B.en_US
dc.contributor.authorDemirci, S.en_US
dc.contributor.authorAktürk, O. Ü.en_US
dc.contributor.authorAktürk, E.en_US
dc.contributor.authorÇıracı, Salimen_US
dc.date.accessioned2018-04-12T11:03:37Z
dc.date.available2018-04-12T11:03:37Z
dc.date.issued2017en_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractThis paper reveals how the electronic structure, magnetic structure, and topological phase of two-dimensional (2D), single-layer structures of bismuth are modified by point defects. We first showed that a free-standing, single-layer, hexagonal structure of bismuth, named h-bismuthene, exhibits nontrivial band topology. We then investigated interactions between single foreign adatoms and bismuthene structures, which comprise stability, bonding, electronic structure, and magnetic structures. Localized states in diverse locations of the band gap and resonant states in band continua of bismuthene are induced upon the adsorption of different adatoms, which modify electronic and magnetic properties. Specific adatoms result in reconstruction around the adsorption site. Single vacancies and divacancies can form readily in bismuthene structures and remain stable at high temperatures. Through rebondings, Stone-Whales-type defects are constructed by divacancies, which transform into a large hole at high temperature. Like adsorbed adatoms, vacancies induce also localized gap states, which can be eliminated through rebondings in divacancies. We also showed that not only the optical and magnetic properties, but also the topological features of pristine h-bismuthene can be modified by point defects. The modification of the topological features depends on the energies of localized states and also on the strength of coupling between point defects. © 2017 American Physical Society.en_US
dc.identifier.doi10.1103/PhysRevB.96.245424en_US
dc.identifier.issn2469-9950
dc.identifier.urihttp://hdl.handle.net/11693/37132
dc.language.isoEnglishen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.96.245424en_US
dc.source.titlePhysical Review Ben_US
dc.titleModification of electronic structure, magnetic structure, and topological phase of bismuthene by point defectsen_US
dc.typeArticleen_US

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