Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures
buir.contributor.author | Özbay, Ekmel | |
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.epage | 375 | en_US |
dc.citation.issueNumber | 2 | en_US |
dc.citation.spage | 370 | en_US |
dc.citation.volumeNumber | 51 | en_US |
dc.contributor.author | Arslan, E. | en_US |
dc.contributor.author | Bütün, S. | en_US |
dc.contributor.author | Şafak, Y. | en_US |
dc.contributor.author | Uslu, H. | en_US |
dc.contributor.author | Tascioglu I. | en_US |
dc.contributor.author | Altindal, S. | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.date.accessioned | 2016-02-08T12:20:03Z | |
dc.date.available | 2016-02-08T12:20:03Z | |
dc.date.issued | 2010 | en_US |
dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
dc.department | Department of Physics | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.description.abstract | The forward and reverse bias I-V, C-V, and G/ω-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22Ga 0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiN x) on the main electrical parameters such as the ideality factor (n), zero-bias barrier height ( B0), series resistance (R s), interface-state density (N ss). The energy density distribution profiles of the N ss were obtained from the forward bias I-V characteristics by taking into account the voltage dependence of the effective barrier height ( e) and ideality factor (n V) of devices. In addition, the N ss as a function of E c-E ss was determined from the low-high frequency capacitance methods. It was found that the values of N ss and R s in SBD HEMTs decreases with increasing insulator layer thickness. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T12:20:03Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2011 | en |
dc.identifier.doi | 10.1016/j.microrel.2010.08.022 | en_US |
dc.identifier.issn | 0026-2714 | |
dc.identifier.uri | http://hdl.handle.net/11693/28416 | |
dc.language.iso | English | en_US |
dc.publisher | ELSEVIER | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1016/j.microrel.2010.08.022 | en_US |
dc.source.title | Microelectronics Reliability | en_US |
dc.subject | AlGaN/AlN/GaN | en_US |
dc.subject | Barrier heights | en_US |
dc.subject | Electrical characterization | en_US |
dc.subject | Electrical parameter | en_US |
dc.subject | Energy density distributions | en_US |
dc.subject | Forward bias | en_US |
dc.subject | Heterostructures | en_US |
dc.subject | High electron mobility | en_US |
dc.subject | Ideality factors | en_US |
dc.subject | Insulator layer | en_US |
dc.subject | Interface state density | en_US |
dc.subject | IV characteristics | en_US |
dc.subject | Low-high | en_US |
dc.subject | MIS structure | en_US |
dc.subject | Reverse bias | en_US |
dc.subject | Room temperature | en_US |
dc.subject | Series resistances | en_US |
dc.subject | Voltage dependence | en_US |
dc.subject | Zero-bias | en_US |
dc.subject | Gallium | en_US |
dc.subject | Heterojunctions | en_US |
dc.subject | High electron mobility transistors | en_US |
dc.subject | Silicon nitride | en_US |
dc.subject | Schottky barrier diodes | en_US |
dc.title | Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures | en_US |
dc.type | Article | en_US |
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