High sensitivity and multifunctional micro-Hall sensors fabricated using InAlSb/InAsSb/InAlSb heterostructures

dc.citation.issueNumber7en_US
dc.citation.volumeNumber105en_US
dc.contributor.authorBando, M.en_US
dc.contributor.authorOhashi, T.en_US
dc.contributor.authorDede, M.en_US
dc.contributor.authorAkram, R.en_US
dc.contributor.authorOral, A.en_US
dc.contributor.authorPark, S.Y.en_US
dc.contributor.authorShibasaki I.en_US
dc.contributor.authorHanda H.en_US
dc.contributor.authorSandhu, A.en_US
dc.date.accessioned2016-02-08T10:04:32Z
dc.date.available2016-02-08T10:04:32Z
dc.date.issued2009en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractFurther diversification of Hall sensor technology requires development of materials with high electron mobility and an ultrathin conducting layer very close to the material's surface. Here, we describe the magnetoresistive properties of micro-Hall devices fabricated using InAlSb/InAsSb/InAlSb heterostructures where electrical conduction was confined to a 30 nm-InAsSb two-dimensional electron gas layer. The 300 K electron mobility and sheet carrier concentration were 36 500 cm2 V-1 s-1 and 2.5× 1011 cm-2, respectively. The maximum current-related sensitivity was 2 750 V A-1 T-1, which was about an order of magnitude greater than AlGaAs/InGaAs pseudomorphic heterostructures devices. Photolithography was used to fabricate 1 μm×1 μm Hall probes, which were installed into a scanning Hall probe microscope and used to image the surface of a hard disk. © 2009 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.3074513en_US
dc.identifier.issn218979
dc.identifier.urihttp://hdl.handle.net/11693/22772
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3074513en_US
dc.source.titleJournal of Applied Physicsen_US
dc.subjectConducting layersen_US
dc.subjectElectrical conductionsen_US
dc.subjectHall probesen_US
dc.subjectHall sensorsen_US
dc.subjectHard disksen_US
dc.subjectHeterostructuresen_US
dc.subjectHeterostructures devicesen_US
dc.subjectHigh electron mobilitiesen_US
dc.subjectHigh sensitivitiesen_US
dc.subjectMagnetoresistive propertiesen_US
dc.subjectMaterial's surfacesen_US
dc.subjectMicro-hall devicesen_US
dc.subjectMicro-hall sensorsen_US
dc.subjectOrder of magnitudesen_US
dc.subjectScanning hall probesen_US
dc.subjectSheet carrier concentrationsen_US
dc.subjectCarrier concentrationen_US
dc.subjectCrystalsen_US
dc.subjectElectron gasen_US
dc.subjectElectron mobilityen_US
dc.subjectElectronsen_US
dc.subjectGalvanomagnetic effectsen_US
dc.subjectHall effect devicesen_US
dc.subjectProbesen_US
dc.subjectSensorsen_US
dc.subjectTwo dimensionalen_US
dc.subjectTwo dimensional electron gasen_US
dc.subjectHall mobilityen_US
dc.titleHigh sensitivity and multifunctional micro-Hall sensors fabricated using InAlSb/InAsSb/InAlSb heterostructuresen_US
dc.typeArticleen_US
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