Graphene Nanoplatelets Embedded in HfO2 for MOS Memory

Date
2015
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Source Title
ECS Transactions
Print ISSN
1938-5862
Electronic ISSN
Publisher
Electrochemical Society Inc.
Volume
66
Issue
14
Pages
39 - 43
Language
English
Type
Article
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Abstract

In this work, a MOS memory with graphene nanoplatelets charge trapping layer and a double layer high-κ Al2O3/HfO2 tunnel oxide is demonstrated. Using C-Vgate measurements, the memory showed a large memory window at low program/erase voltages. The analysis of the C-V characteristics shows that electrons are being stored in the graphene-nanoplatelets during the program operation. In addition, the retention characteristic of the memory is studied by plotting the hysteresis measurement vs. time. The measured excellent retention characteristic (28.8% charge loss in 10 years) is due to the large electron affinity of the graphene. The analysis of the plot of the energy band diagram of the MOS structure further proves its good retention characteristic. Finally, the results show that such graphene nanoplatelets are promising in future low-power non-volatile memory devices.

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Keywords
C (programming language), Charge trapping, Data storage equipment, Digital storage, Electron affinity, Memory architecture, C-V characteristic, Charge trapping layers, Energy-band diagram, Graphene nanoplatelets, Hysteresis measurements, Nonvolatile memory devices, Program operation, Retention characteristics, Graphene
Citation
Published Version (Please cite this version)