Super-radiant surface emission from a quasi-cavity hot electron light emitter

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dc.citation.epage190en_US
dc.citation.issueNumber2en_US
dc.citation.spage183en_US
dc.citation.volumeNumber31en_US
dc.contributor.authorO'Brien, A.en_US
dc.contributor.authorBalkan, N.en_US
dc.contributor.authorBoland-Thoms, A.en_US
dc.contributor.authorAdams, M.en_US
dc.contributor.authorBek, A.en_US
dc.contributor.authorSerpengüzel, A.en_US
dc.contributor.authorAydınlı, A.en_US
dc.contributor.authorRoberts, J.en_US
dc.date.accessioned2016-02-08T10:39:34Z
dc.date.available2016-02-08T10:39:34Z
dc.date.issued1999en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure (HELLISH-1) device is a novel surface emitter which utilises hot carrier transport parallel to the layers of a Ga1 - xAlxAs p-n junction incorporating a single GaAs quantum well on the n-side of the junction plane. Non-equilibrium electrons are injected into the quantum well via tunnelling from the n-layer. In order to preserve the charge neutrality in the depletion region, the junction undergoes a self-induced internal biasing. As a result the built-in potential on the p-side is reduced and hence the injection of non-equilibrium holes into the quantum well in the active region is enhanced. The work presented here shows that a distributed Bragg reflector grown below the active region of the HELLISH device increases the emitted light intensity by two orders of magnitude and reduces the emission line-width by about a factor of 3 in comparison with the original HELLISH-1 structure. Therefore, the device can be operated as an ultrabright emitter with higher spectral purity.en_US
dc.identifier.doi10.1023/A:1006961123975en_US
dc.identifier.eissn1572-817X
dc.identifier.issn0306-8919
dc.identifier.urihttp://hdl.handle.net/11693/25131
dc.language.isoEnglishen_US
dc.publisherSpringer New York LLCen_US
dc.relation.isversionofhttps://doi.org/10.1023/A:1006961123975en_US
dc.source.titleOptical and Quantum Electronicsen_US
dc.subjectElectron tunnelingen_US
dc.subjectHeterojunctionsen_US
dc.subjectHot carriersen_US
dc.subjectInjection lasersen_US
dc.subjectMirrorsen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectSemiconductor device structuresen_US
dc.subjectDistributed Bragg reflectors (DBR)en_US
dc.subjectElectron injectionen_US
dc.subjectSurface emitting lasersen_US
dc.subjectQuantum well lasersen_US
dc.titleSuper-radiant surface emission from a quasi-cavity hot electron light emitteren_US
dc.typeArticleen_US

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