Integrated Piezoresistive Sensors for AFM-Guided Scanning Hall Probe Microscopy

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dc.citation.epage3540en_US
dc.citation.issueNumber20en_US
dc.citation.spage3538en_US
dc.citation.volumeNumber82en_US
dc.contributor.authorBrook, J.en_US
dc.contributor.authorBending, S. J.en_US
dc.contributor.authorPinto, J.en_US
dc.contributor.authorOral, A.en_US
dc.contributor.authorRitchie, D.en_US
dc.contributor.authorBeere, H.en_US
dc.contributor.authorHenini, M.en_US
dc.contributor.authorSpringthorpe, A.en_US
dc.date.accessioned2015-07-28T11:57:19Z
dc.date.available2015-07-28T11:57:19Z
dc.date.issued2003en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe report the development of an advanced sensor for atomic force-guided scanning Hall probe microscopy whereby both a high mobility heterostructure Hall effect magnetic sensor and an n-Al0.4Ga0.6As piezoresistive displacement sensor have been integrated in a single III-V semiconductor cantilever. This allows simple operation in high-vacuum/variable-temperature environments and enables very high magnetic and topographic resolution to be achieved simultaneously. Scans of magnetic induction and topography of a number of samples are presented to illustrate the sensor performance at 300 and 77 K. (C) 2003 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.1576914en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/11282
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/ 10.1063/1.1576914en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectGaasen_US
dc.titleIntegrated Piezoresistive Sensors for AFM-Guided Scanning Hall Probe Microscopyen_US
dc.typeArticleen_US

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