Anharmonic line shift and linewidth of the Raman modes in TlInS2 layered crystals

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage60en_US
dc.citation.issueNumber1en_US
dc.citation.spage55en_US
dc.citation.volumeNumber35en_US
dc.contributor.authorYuksek, N. S.en_US
dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2016-02-08T10:27:54Z
dc.date.available2016-02-08T10:27:54Z
dc.date.issued2004en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe temperature dependence of the unpolarized Raman spectra from TlInS 2 layered crystal was measured between 10 and 300 K. The analysis of the experimental data showed that the temperature dependences of wavenumbers and linewidths are well described by considering the contributions from thermal expansion and lattice anharmonicity. The purely anharmonic contribution (phonon-phonon coupling) was found to be due to three-phonon processes. This work demonstrates that the two Raman modes at 280.9 and 292.3 cm-1 exhibit changes toward high wavenumbers as the temperature is raised from 10 to 300 K.en_US
dc.identifier.doi10.1002/jrs.1083en_US
dc.identifier.issn0377-0486
dc.identifier.urihttp://hdl.handle.net/11693/24341
dc.language.isoEnglishen_US
dc.publisherJohn Wiley & Sons Ltd.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/jrs.1083en_US
dc.source.titleJournal of Raman Spectroscopyen_US
dc.subjectAnharmonicityen_US
dc.subjectLayered crystalsen_US
dc.subjectPhonon temperature dependenceen_US
dc.subjectPhonon-phonon couplingen_US
dc.subjectTlInS2en_US
dc.subjectindiumen_US
dc.subjectThalliumen_US
dc.subjectAnisotropyen_US
dc.subjectCrystalen_US
dc.subjectPhononen_US
dc.subjectRaman spectrometryen_US
dc.subjectTemperature dependenceen_US
dc.subjectWaveformen_US
dc.titleAnharmonic line shift and linewidth of the Raman modes in TlInS2 layered crystalsen_US
dc.typeArticleen_US

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