Synthesis of stable mesostructured coupled semiconductor thin films: meso-CdS-TiO2 and meso-CdSe-TiO2

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dc.citation.epage544en_US
dc.citation.issueNumber1en_US
dc.citation.spage538en_US
dc.citation.volumeNumber26en_US
dc.contributor.authorOkur, H. İ.en_US
dc.contributor.authorTürker, Y.en_US
dc.contributor.authorDag, Ö.en_US
dc.date.accessioned2016-02-08T10:00:26Z
dc.date.available2016-02-08T10:00:26Z
dc.date.issued2010en_US
dc.departmentDepartment of Chemistryen_US
dc.description.abstractCd(II) ions can be incorporated into the channels of mesostructured titania films, using the evaporation-induced self-assembly (EISA) approach, up to a record high Cd/Ti mole ratio of 25%. The film samples were obtained by spin or dip coating from a mixture of 1-butanol, [Cd(H20)4] (N03)2, HNO3, and Ti(OC4H 9)4 and then aging the samples under 50% humidity at 30 0C (denoted as meso-xCd(II)-y TiO2). The nitrate ions, from nitric acid and cadmium nitrate, play important roles in the assembly process by coordinating as bidentate and bridged ligands to Cd(II) and Ti(IV) sites, respectively, in the mesostructured titania films. The film samples can be reacted under a H 2S (or H2Se) gas atmosphere to produce CdS (or CdSe) on the channel surface and/or pore walls. However, the presence of such a large number of nitrate ions in the film samples also yields an extensive amount of nitric acid upon H2S (or H2Se) reaction, where the nanoparticles are not stable (they undergo decomposition back to metal ion and H2S or H2Se gas). However, this problem can be overcome by further aging the samples at 130 °C for a few hours before H2S (or H2Se) reaction. This step removes about 90% of the nitrate ions, eliminates the nitric acid production step, and stabilizes the CdS nanoparticles on the surface and/or walls of the pores of the coupled semiconductor films, denoted as meso-xCdS-yTiO2. However, the H2Se reaction, additionally, needs to be carried at lower H2Se pressures in an N2 atmosphere to produce stable CdSe nanoparticles on the surface and/or walls of the pores of the films, denoted as meso-xCdSe-.yTiO2. Otherwise, an excessive number of Se8 particles form in the film samples.en_US
dc.identifier.doi10.1021/la9022689en_US
dc.identifier.eissn1520-5827
dc.identifier.issn0743-7463
dc.identifier.urihttp://hdl.handle.net/11693/22461
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/la9022689en_US
dc.source.titleLangmuiren_US
dc.subject1-butanolen_US
dc.subjectAssembly processen_US
dc.subjectBridged ligandsen_US
dc.subjectCadmium nitrateen_US
dc.subjectCdSen_US
dc.subjectCdS nanoparticlesen_US
dc.subjectCdSE nanoparticlesen_US
dc.subjectChannel surfaceen_US
dc.subjectCoupled semiconductoren_US
dc.subjectDip coatingen_US
dc.subjectEvaporation-induced self-assemblyen_US
dc.subjectGas atmosphereen_US
dc.subjectMesostructureden_US
dc.subjectMole ratioen_US
dc.subjectNitrate ionsen_US
dc.subjectNitric acid productionen_US
dc.subjectPore wallen_US
dc.subjectTiOen_US
dc.subjectTitania filmsen_US
dc.subjectAcidsen_US
dc.subjectCadmiumen_US
dc.subjectCadmium alloysen_US
dc.subjectCadmium sulfideen_US
dc.subjectData storage equipmenten_US
dc.subjectMetal ionsen_US
dc.subjectMetallic filmsen_US
dc.subjectNanoparticlesen_US
dc.subjectNitratesen_US
dc.subjectNitric aciden_US
dc.subjectSemiconducting selenium compoundsen_US
dc.subjectSynthesis (chemical)en_US
dc.subjectTitanium dioxideen_US
dc.subjectCadmium compoundsen_US
dc.titleSynthesis of stable mesostructured coupled semiconductor thin films: meso-CdS-TiO2 and meso-CdSe-TiO2en_US
dc.typeArticleen_US

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