Low dark current diffusion limited planar type InGaAs photodetectors
buir.contributor.author | Dolaş, M. Halit | |
buir.contributor.author | Ateşal, Okan | |
buir.contributor.author | Çalışkan, M. Deniz | |
buir.contributor.author | Özbay, Ekmel | |
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.epage | 6 | en_US |
dc.citation.spage | 1 | en_US |
dc.citation.volumeNumber | 11129 | en_US |
dc.contributor.author | Dolaş, M. Halit | en_US |
dc.contributor.author | Ateşal, Okan | en_US |
dc.contributor.author | Çalışkan, M. Deniz | en_US |
dc.contributor.author | Bek, A. | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.contributor.editor | LeVan, P. D. | |
dc.contributor.editor | Wijewarnasuriya, P. | |
dc.contributor.editor | Sood, A. K. | |
dc.coverage.spatial | San Diego, California, United States | en_US |
dc.date.accessioned | 2020-01-30T11:03:22Z | |
dc.date.available | 2020-01-30T11:03:22Z | |
dc.date.issued | 2019 | |
dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
dc.description | Date of Conference: 11-15 August 2019 | en_US |
dc.description | Conference Name: SPIE Optical Engineering and Applications, 2019 | en_US |
dc.description.abstract | In this work, we design and produce 1280x1024 format InGaAs based planar type detectors with 15μm pixel pitch. We have obtained diffusion current limited low dark current (~10fA) and high responsivity (1.08A/W at 1.55μm) values at room temperature conditions. Moreover, dark current modeling is performed using diffusion, generation and recombination (GR) and trap assisted tunneling (TAT) current mechanisms. Ideality factor is extracted from forward bias characteristics. Excellent match between modeling and experimental data is reached. Also, temperature dependency of dark current is studied in 10°C – 60°C ranges. The area and perimeter related dark current components are differentiated using test detectors with changing diameters that are placed next to the detector array structure. Experimental data shows good agreement with theoretical expectations. | en_US |
dc.description.provenance | Submitted by Zeynep Aykut (zeynepay@bilkent.edu.tr) on 2020-01-30T11:03:22Z No. of bitstreams: 1 Low_dark_current_diffusion_limited_planar_type_InGaAs_photodetectors.pdf: 952920 bytes, checksum: fd7c2275128738a9171854a4bccd55cc (MD5) | en |
dc.description.provenance | Made available in DSpace on 2020-01-30T11:03:22Z (GMT). No. of bitstreams: 1 Low_dark_current_diffusion_limited_planar_type_InGaAs_photodetectors.pdf: 952920 bytes, checksum: fd7c2275128738a9171854a4bccd55cc (MD5) Previous issue date: 2019 | en |
dc.description.sponsorship | The Society of Photo-Optical Instrumentation Engineers (SPIE) | en_US |
dc.identifier.doi | 10.1117/12.2528666 | en_US |
dc.identifier.isbn | 9781510629516 | |
dc.identifier.issn | 0277-786X | |
dc.identifier.uri | http://hdl.handle.net/11693/52929 | |
dc.language.iso | English | en_US |
dc.publisher | SPIE | en_US |
dc.relation.isversionof | https://dx.doi.org/10.1117/12.2528666 | en_US |
dc.source.title | Proceedings of SPIE Vol. 11129, Infrared Sensors, Devices, and Applications IX | en_US |
dc.subject | SWIR | en_US |
dc.subject | InGaAs | en_US |
dc.subject | Planar p-n diodes | en_US |
dc.subject | Low dark current | en_US |
dc.subject | Megapixel | en_US |
dc.title | Low dark current diffusion limited planar type InGaAs photodetectors | en_US |
dc.type | Conference Paper | en_US |
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