Time-resolved XPS analysis of the SiO2/Si system in the millisecond range

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buir.contributor.authorSüzer, Şefik
dc.citation.epage5181en_US
dc.citation.issueNumber17en_US
dc.citation.spage5179en_US
dc.citation.volumeNumber108en_US
dc.contributor.authorDemirok, U. K.en_US
dc.contributor.authorErtas, G.en_US
dc.contributor.authorSüzer, Şefiken_US
dc.date.accessioned2016-02-08T10:27:11Z
dc.date.available2016-02-08T10:27:11Z
dc.date.issued2004en_US
dc.departmentDepartment of Chemistryen_US
dc.description.abstractBy applying voltage pulses to the sample rod while recording the spectrum, we show, for the first time, that it is possible to obtain a time-resolved XPS spectrum in the millisecond range. The Si 2p spectrum of a silicon sample containing a ca. 400-nm oxide layer displays a time-dependent charging shift of ca. 1.7 eV with respect to the Au 4f peaks of a gold metal strip in contact with the sample. When gold is deposited as C12-thiol-capped nanoclusters onto the same sample, this time the Au 4f peaks also display time-dependent charging behavior that is slightly different from that of the Si 2p peak. This charging/discharging is related to emptying/filling of the hole traps in the oxide layer by the stray electrons within the vacuum system guided by the external voltage pulses applied to the sample rod, which can be used to extract important parameter(s) related to the dielectric properties of surface structures.en_US
dc.identifier.doi10.1021/jp049526men_US
dc.identifier.issn1520-6106
dc.identifier.urihttp://hdl.handle.net/11693/24293
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://pubs.acs.org/doi/abs/10.1021/jp049526men_US
dc.source.titleJournal of Physical Chemistry Ben_US
dc.subjectDielectric propertiesen_US
dc.subjectDigital to analog conversionen_US
dc.subjectElectric potentialen_US
dc.subjectInfrared spectroscopyen_US
dc.subjectMOS devicesen_US
dc.subjectNuclear magnetic resonance spectroscopyen_US
dc.subjectRaman spectroscopyen_US
dc.subjectVacuumen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.subjectMillisecond rangeen_US
dc.subjectNanoclustersen_US
dc.subjectVacuum systemsen_US
dc.subjectVoltage pulsesen_US
dc.subjectSilicaen_US
dc.titleTime-resolved XPS analysis of the SiO2/Si system in the millisecond rangeen_US
dc.typeArticleen_US

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