50 nm Hall Sensors for Room Temperature Scanning Hall Probe Microscopy

Abstract

Bismuth nano-Hall sensors with dimensions ∼50nm × 50 nm were fabricated using a combination of optical lithography and focused ion beam milling. The Hall coefficient, series resistance and optimum magnetic field sensitivity of the sensors were 4 × 10-4 Ω/G, 9.1kΩ and 0.8G/√Hz, respectively. A 50nm nano-Bi Hall sensor was installed into a room temperature scanning Hall probe microscope and successfully used for directly imaging ferromagnetic domains of low coercivity garnet thin films.