Implementation of graphene multilayer electrodes in quantum dot light-emitting devices

buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage1203en_US
dc.citation.issueNumber3en_US
dc.citation.spage1197en_US
dc.citation.volumeNumber120en_US
dc.contributor.authorWolff, S.en_US
dc.contributor.authorJansen, D.en_US
dc.contributor.authorTerlinden H.en_US
dc.contributor.authorKelestemur, Y.en_US
dc.contributor.authorMertin W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.contributor.authorBacher G.en_US
dc.contributor.authorNannen, E.en_US
dc.date.accessioned2016-02-08T09:49:14Z
dc.date.available2016-02-08T09:49:14Z
dc.date.issued2015en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractGraphene is a highly attractive candidate for implementation as electrodes in next-generation large-area optoelectronic devices thanks to its high electrical conductivity and high optical transparency. In this study, we show all-solution-processed quantum dot-based light-emitting devices (QD-LEDs) using graphene mono- and multilayers as transparent electrodes. Here, the effect of the number of graphene layers (up to three) on the QD-LEDs performance was studied. While the implementation of a second graphene layer was found to reduce the turn-on voltage from 2.6 to 1.8 V, a third graphene layer was observed to increase the turn-on voltage again, which is attributed to an increased roughness of the graphene layer stack. © 2015, Springer-Verlag Berlin Heidelberg.en_US
dc.identifier.doi10.1007/s00339-015-9304-zen_US
dc.identifier.issn0947-8396
dc.identifier.urihttp://hdl.handle.net/11693/21647
dc.language.isoEnglishen_US
dc.publisherSpringer Verlagen_US
dc.relation.isversionofhttp://dx.doi.org/10.1007/s00339-015-9304-zen_US
dc.source.titleApplied Physics A: Materials Science and Processingen_US
dc.subjectCurrent densityen_US
dc.subjectElectrodesen_US
dc.subjectGrapheneen_US
dc.subjectLight emissionen_US
dc.subjectMonolithic microwave integrated circuitsen_US
dc.subjectMultilayersen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectSemiconductor quantum dotsen_US
dc.subjectGraphene layersen_US
dc.subjectGraphene multilayersen_US
dc.subjectHigh electrical conductivityen_US
dc.subjectLight emitting devicesen_US
dc.subjectMono- and multilayeren_US
dc.subjectOptical transparencyen_US
dc.subjectTransparent electrodeen_US
dc.subjectTurn-on voltagesen_US
dc.subjectLight emitting diodesen_US
dc.titleImplementation of graphene multilayer electrodes in quantum dot light-emitting devicesen_US
dc.typeArticleen_US

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