Dielectric screening effects on electron transport in Ga0.51In0.49P/InxGa1-xAs/GaAs quantum wells

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buir.contributor.authorTanatar, Bilal
buir.contributor.orcidTanatar, Bilal|0000-0002-5246-0119
dc.citation.epage1510en_US
dc.citation.issueNumber3en_US
dc.citation.spage1504en_US
dc.citation.volumeNumber88en_US
dc.contributor.authorBesikci, C.en_US
dc.contributor.authorBakir, A. T.en_US
dc.contributor.authorTanatar, Bilalen_US
dc.date.accessioned2015-07-28T11:57:00Z
dc.date.available2015-07-28T11:57:00Z
dc.date.issued2000-04-18en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe effects of dielectric screening on the two dimensional polar optical phonon scattering and on electron transport in Ga0.51In0.49P/InxGa1-xAs/GaAs (x=0, 0.15, and 0.25) modulation doped heterostructures and high electron mobility transistors are investigated through the ensemble Monte Carlo technique. The two dimensional polar optical phonon scattering rates including and excluding dielectric screening effects are calculated using the self-consistently evaluated electronic states in the quantum well. The calculated scattering rates are compared in order to see the effects of screening on the inter- and intra-subband scattering. Screening significantly lowers the intra-subband polar optical phonon scattering rates in both lattice matched and pseudomorphic structures. This results in a considerable lowering of the critical electric field beyond which negative differential resistance is seen. Screening also modifies the dependence of transport properties on the quantum well parameters. The results of the ensemble Monte Carlo simulations of high electron mobility transistors show that the performance of the device is considerably underestimated, if screening is not included in the calculation of the polar optical phonon scattering rates. (C) 2000 American Institute of Physics.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T11:57:00Z (GMT). No. of bitstreams: 1 10.1063-1.373846.pdf: 381878 bytes, checksum: 95d614a473e21538c5d9462fb8a45d23 (MD5)en
dc.identifier.doi10.1063/1.373846en_US
dc.identifier.issn1286-0042
dc.identifier.urihttp://hdl.handle.net/11693/11157
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.373846en_US
dc.source.titleEuropean Physical Journal : Applied Physicsen_US
dc.subjectMonte-carlo Simulationen_US
dc.subjectSemiconductor Layersen_US
dc.subjectPhonon Interactionen_US
dc.subjectHeterostructuresen_US
dc.subjectScatteringen_US
dc.subjectGasen_US
dc.subjectGa0.51in0.49pen_US
dc.subjectTemperaturesen_US
dc.titleDielectric screening effects on electron transport in Ga0.51In0.49P/InxGa1-xAs/GaAs quantum wellsen_US
dc.typeArticleen_US

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