Effect of rf pumping frequency and rf input power on the flux to voltage transfer function of rf-SQUIDs

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dc.citation.epage679en_US
dc.citation.issueNumber2en_US
dc.citation.spage676en_US
dc.citation.volumeNumber17en_US
dc.contributor.authorAkram, Rizwanen_US
dc.contributor.authorEker, Taylanen_US
dc.contributor.authorBozbey, Alien_US
dc.contributor.authorFardmanesh, Mehdien_US
dc.contributor.authorSchubert, J.en_US
dc.contributor.authorBanzet, M.en_US
dc.coverage.spatialSeattle, Washington, USAen_US
dc.date.accessioned2016-02-08T11:44:20Zen_US
dc.date.available2016-02-08T11:44:20Zen_US
dc.date.issued2007en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionDate of Conference: 27 August-1 September 2006en_US
dc.descriptionConference Name: Applied Superconductivity Conference, ASC 2006en_US
dc.description.abstractWe present the results on the correlation between the flux to voltage transfer function, Vspp, of the rf-SQUID and the rf-bias frequency as well as rf-bias power. Measurements were performed for different SQUID gradiometer samples chosen from the same batch or different batches. In order to have full control on the electronics parameters, an experimental rf-SQUID circuit was designed and implemented with an operation frequency of 600 MHz to 900 MHz. According to our findings, It has been observed that at any particular rf-bias power, Vspp vs. rf-bias frequency shows Sine-like behavior. We observed that the main lobe maxima exist close to the resonance frequency of the LC tank circuit and by changing only the power, amplitude of the main lobe and side lobes can be controlled. The Vspp vs. rf-bias power analysis shows that maximum of Vspp, strongly depends on the bias frequency. This can be correlated with the S11 parameter of LC tank circuit. We also observed that the devices from the same batch show main lobe maxima at different frequencies and/or power. Our SQUIDs with high working frequency gave their maxima at lower rf-bias powers leading to the need of having high frequency electronics with low bias power handling capabilities. It has also been observed that the SQUIDs from the same chip show similar characteristics regarding Vspp vs. frequency and power while the SQUIDs from different batches show completely different behavior for a fixed LC tank circuit configuration.en_US
dc.identifier.doi10.1109/TASC.2007.899840en_US
dc.identifier.issn1051-8223en_US
dc.identifier.urihttp://hdl.handle.net/11693/27102en_US
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/TASC.2007.899840en_US
dc.source.titleIEEE Transactions on Applied Superconductivityen_US
dc.subjectFlux to voltage transfer functionen_US
dc.subjectGradiometeren_US
dc.subjectrf-SQUIDen_US
dc.subjectrf-SQUID electronicsen_US
dc.subjectBias currentsen_US
dc.subjectElectric potentialen_US
dc.subjectMagnetometersen_US
dc.subjectNatural frequenciesen_US
dc.subjectTransfer functionsen_US
dc.subjectElectronics parametersen_US
dc.titleEffect of rf pumping frequency and rf input power on the flux to voltage transfer function of rf-SQUIDsen_US
dc.typeConference Paperen_US

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