Silicon nanowire network metal-semiconductor-metal photodetectors

Date
2013-08-23
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Source Title
Applied Physics Letters
Print ISSN
0003-6951
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Publisher
AIP Publishing LLC.
Volume
103
Issue
8
Pages
083114-1 - 083114-5
Language
English
Type
Article
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Abstract

We report on the fabrication and characterization of solution-processed, highly flexible, silicon nanowire network based metal-semiconductor-metal photodetectors. Both the active part of the device and the electrodes are made of nanowire networks that provide both flexibility and transparency. Fabricated photodetectors showed a fast dynamic response, 0.43 ms for the rise and 0.58 ms for the fall-time, with a decent on/off ratio of 20. The effect of nanowire-density on transmittance and light on/off behavior were both investigated. Flexible photodetectors, on the other hand, were fabricated on polyethyleneterephthalate substrates and showed similar photodetector characteristics upon bending down to a radius of 1 cm.

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Keywords
Aqueous Fluoride Solution, Solar-cells, Si nanowires, Photovoltaic applications, Room-temperature, Arrays, Orientation, Performance, Fabrication, Mechanism
Citation
Published Version (Please cite this version)