Mg-doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage873en_US
dc.citation.issueNumber5en_US
dc.citation.spage868en_US
dc.citation.volumeNumber203en_US
dc.contributor.authorYu, H.en_US
dc.contributor.authorStrupinski, W.en_US
dc.contributor.authorButun, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:19:45Z
dc.date.available2016-02-08T10:19:45Z
dc.date.issued2006en_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThe growth of high-performance Mg-doped p-type Al xGa 1-xN (x = 0.35) layers using low-pressure metal-organic chemical vapour deposition on an AlN/sapphire template is reported. The influence of growth conditions on the p-type conductivity of the Al xGa 1-xN (x = 0.35) alloy was investigated. It was found that the p-type resistivity of the AlGaN alloy demonstrates a marked dependence on the Mg concentration, V/III ratio and group III element flow rate. A minimum p-type resistivity of 3.5 Ω cm for Al xGa 1-xN (x = 0.35) epilayers was achieved. A Ni/Au (10 nm/100 nm) ohmic contact was also fabricated and a specific contact resistivity of 8.1 × 10 -2 Ω cm 2 was measured. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.en_US
dc.identifier.doi10.1002/pssa.200521461en_US
dc.identifier.issn18626300
dc.identifier.urihttp://hdl.handle.net/11693/23820
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/pssa.200521461en_US
dc.source.titlePhysica Status Solidi (A) Applications and Materials Scienceen_US
dc.subjectP-type conductivityen_US
dc.subjectP-type resistivityen_US
dc.subjectSpecific contact resistivityen_US
dc.subjectElectric resistanceen_US
dc.subjectMagnesium printing platesen_US
dc.subjectMetallorganic chemical vapor depositionen_US
dc.subjectSapphireen_US
dc.subjectSemiconductor dopingen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.titleMg-doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour depositionen_US
dc.typeArticleen_US

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