High-speed solar-blind AlGaN Schottky photodiodes

Date

2003

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Source Title

Proceedings of the Materials Research Society Symposium, MRS 2003

Print ISSN

0272-9172

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Cambridge University Press

Volume

764

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Pages

355 - 360

Language

English

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Abstract

We report high-speed solar-blind AlGaN-based Schottky photodiodes. AlGaN/GaN heterostructure device layers were grown on sapphire substrate. The devices were fabricated on AlGaN/GaN heterostructuresusing a microwave compatible fabrication process. Schottky photodiodes with Au and indium-tin-oxide (ITO) Schottky contacts were fabricated. Current-voltage, spectral responsivity, and high-speed measurements were performed. Both Schottky samples exhibited very low sub-pA dark currents at high reverse bias. A bias dependent spectral responsivity was observed with a peak responsivity of 89 mA/W at 267 nm, and 44 mA/W at 263 nm for Au and ITO-Schottky devices respectively. Time-based high-frequency measurements at 267 nm resulted in pulse responses with rise times and pulse-widths as short as 13 ps and 74 ps respectively. The fastest solar-blind detector had a record 3-dB bandwidth of 1.10 GHz.

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Published Version (Please cite this version)