MOCVD growth and optical properties of non-polar (11-20) a-plane GaN on (10-12) r-plane sapphire substrate

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage3442en_US
dc.citation.issueNumber23en_US
dc.citation.spage3438en_US
dc.citation.volumeNumber312en_US
dc.contributor.authorYu, H.en_US
dc.contributor.authorOzturk, M.en_US
dc.contributor.authorDemirel, P.en_US
dc.contributor.authorCakmak, H.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T11:59:30Z
dc.date.available2015-07-28T11:59:30Z
dc.date.issued2010-11-15en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractNon-polar a-plane GaN film with crystalline quality and anisotropy improvement is grown by use of high temperature AlN/AlGaN buffer, which is directly deposited on r-plane sapphire by pulse flows. Compared to the a-plane GaN grown on AIN buffer, X-ray rocking curve analysis reveals a remarkable reduction in the full width at half maximum, both on-axis and off-axis. Atomic force microscopy image exhibits a fully coalesced pit-free surface morphology with low root-mean-square roughness (similar to 1.5 nm). Photoluminescence is carried out on the a-plane GaN grown on r-plane sapphire. It is found that, at low temperature, the dominant emission at similar to 3.42 eV is composed of two separate peaks with different characteristics, which provide explanations for the controversial attributions of this peak in previous studies. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T11:59:30Z (GMT). No. of bitstreams: 1 10.1016-j.jcrysgro.2010.08.052.pdf: 1077794 bytes, checksum: 06bffaec6e7a195dbccb9708696ffd86 (MD5)en
dc.identifier.doi10.1016/j.jcrysgro.2010.08.052en_US
dc.identifier.issn0022-0248
dc.identifier.urihttp://hdl.handle.net/11693/11979
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.jcrysgro.2010.08.052en_US
dc.source.titleJournal of Crystal Growthen_US
dc.subjectAtomic Force Microscopyen_US
dc.subjectCrystal Structureen_US
dc.subjectX-ray Diffractionen_US
dc.subjectMetalorganic Vapor Phase Epitaxyen_US
dc.subjectNitridesen_US
dc.subjectSemiconducting Gallium Compoundsen_US
dc.titleMOCVD growth and optical properties of non-polar (11-20) a-plane GaN on (10-12) r-plane sapphire substrateen_US
dc.typeArticleen_US

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