Scanning-tunneling microscopy at small tip-to-surface distances

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buir.contributor.authorÇıracı, Salim
buir.contributor.orcidÇıracı, Salim|0000-0001-8023-9860
dc.citation.epage6197en_US
dc.citation.issueNumber11en_US
dc.citation.spage6194en_US
dc.citation.volumeNumber36en_US
dc.contributor.authorÇıracı, Salimen_US
dc.contributor.authorBatra, I. P.en_US
dc.date.accessioned2016-02-08T10:57:46Z
dc.date.available2016-02-08T10:57:46Z
dc.date.issued1987en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe scanning-tunneling microscopy (STM) of graphite at small tip-to-surface distances is investigated using the self-consistent-field pseudopotential method. We have calculated potential, charge density in the region between the tip and surface, and the force corrugation. Our results reveal that the tip at the close proximity to the surface disturbs the states near the Fermi level, and induces localized states. The STM images, which are usually related to the local density of states at the Fermi level of the clean surface, are affected by these localized states. The tunneling barrier is shown to collapse at small distances and a new mechanism for current is postulated. Some experimental evidence for this effect is presented. © 1987 The American Physical Society.en_US
dc.identifier.doi10.1103/PhysRevB.36.6194en_US
dc.identifier.issn1631829
dc.identifier.urihttp://hdl.handle.net/11693/26286
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.36.6194en_US
dc.source.titlePhysical Review Ben_US
dc.titleScanning-tunneling microscopy at small tip-to-surface distancesen_US
dc.typeArticleen_US

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