S-band GaN high power amplifier design and implementation

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buir.advisorÖzbay, Ekmel
dc.contributor.authorKavuştu, Muhammet
dc.date.accessioned2019-02-26T12:37:44Z
dc.date.available2019-02-26T12:37:44Z
dc.date.copyright2019-02
dc.date.issued2019-02
dc.date.submitted2019-02-21
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionCataloged from PDF version of article.en_US
dc.descriptionThesis (M.S.) : Bilkent University, Department of Electrical and Electronics Engineering, İhsan Doğramacı Bilkent University, 2019.en_US
dc.descriptionIncludes bibliographical references (leaves 77-80).en_US
dc.description.abstractHigh power RF Microwave amplifiers are becoming more important as the telecommunications, defense and aerospace industries' demands develop. GaN on SiC technology offers higher power and better form factors for these applications compared to GaAs. In addition, SiC provides better mechanical properties and thermal performance. Design, manufacturing and measurements of a S-Band Power Amplifier by using a GaN discrete bare die transistor are presented. GaN on SiC technology, fabrication process, amplifier fundamentals and design steps are explained in detail. PCB laminate properties, manufacturing, wire bonding and importance of heat management are explained. Design, tapeout, characterization of a fabricated HEMT and its packaging are also mentioned. Power amplifier's small-signal gain of 14.5 dB is measured at center frequency. 41.5 dBm RF power at P6dB is measured at 200 μs pulse width 10% duty cycle at 3 GHz, reaching a power density of 5:4W=mm. Small-signal gain, IP3 measurements under different biases, AMAM and AM-PM distortions are also investigated in detail. EM simulations are performed in Keysight ADS design environment. Amplifier design is based on small-signal and loadpull measurements. De-embedding of fixture effects during HEMT characterization and their models are also investigated. Another hybrid amplifier design by using a packaged commercial GaN on SiC bare die power HEMT is also presented. Small-signal and power measurements are also offered.en_US
dc.description.degreeM.S.en_US
dc.description.statementofresponsibilityby Muhammet Kavuştuen_US
dc.format.extentxv, 80 leaves : illustrations (some color), charts (some color) ; 30 cm.en_US
dc.identifier.itemidB159727
dc.identifier.urihttp://hdl.handle.net/11693/50631
dc.language.isoEnglishen_US
dc.publisherBilkent Universityen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectGaNen_US
dc.subjectPower amplifieren_US
dc.subjectMicrostripen_US
dc.subjectHybriden_US
dc.subjectS-Banden_US
dc.subjectCharacterizationen_US
dc.titleS-band GaN high power amplifier design and implementationen_US
dc.title.alternativeS-bant galyum nitrür yüksek güçlü yükselteç tasarımı ve uygulamasıen_US
dc.typeThesisen_US

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Dept. of Electrical and Electronics Engineering - Master's degree