A band selecting UHF class-AB GaN power amplifier with 40 dBm output power
| buir.advisor | Atalar, Abdullah | |
| dc.contributor.author | Alemdar, Sinan | |
| dc.date.accessioned | 2016-01-08T18:25:57Z | |
| dc.date.available | 2016-01-08T18:25:57Z | |
| dc.date.issued | 2013 | |
| dc.description | Ankara : The Department of Electrical and Electronics Engineering and the Graduate School of Engineering and Science of Bilkent University, 2013. | en_US |
| dc.description | Thesis (Master's) -- Bilkent University, 2013. | en_US |
| dc.description | Includes bibliographical references leaves 44-45. | en_US |
| dc.description.abstract | Ultra High Frequency (UHF) band is used for GSM communication, satellite systems, television broadcast, frequency hopping radios, software de ned radios using advanced digital modulations. Each and every application would require various speci cations and these modern applications require various frequency bands. In this work, a band selecting uhf class-ab GaN power ampli er with 40 dBm output power is built using a GaN-HEMT transistors and PIN diodes. The power ampli er can be tuned in 1350MHz{2700MHz one-octave frqeuency band, has a maximum gain of 17dB, and a maximum saturated output power of 41 dBm. | en_US |
| dc.description.provenance | Made available in DSpace on 2016-01-08T18:25:57Z (GMT). No. of bitstreams: 1 0006577.pdf: 8742776 bytes, checksum: a99e288d408268b0249c44cb21e0b1b1 (MD5) | en |
| dc.description.statementofresponsibility | Alemdar, Sinan | en_US |
| dc.format.extent | xiii, 46, [96] leaves, tables, graphs | en_US |
| dc.identifier.uri | http://hdl.handle.net/11693/15877 | |
| dc.language.iso | English | en_US |
| dc.rights | info:eu-repo/semantics/openAccess | en_US |
| dc.subject | Tunable Ampli er | en_US |
| dc.subject | PIN Diode | en_US |
| dc.subject | Gallium Nitride Transistor | en_US |
| dc.subject | Power Ampli er | en_US |
| dc.subject.lcc | TK7871.58.P6 A44 2013 | en_US |
| dc.subject.lcsh | Power amplifiers--Design and construction. | en_US |
| dc.title | A band selecting UHF class-AB GaN power amplifier with 40 dBm output power | en_US |
| dc.type | Thesis | en_US |
| thesis.degree.discipline | Electrical and Electronic Engineering | |
| thesis.degree.grantor | Bilkent University | |
| thesis.degree.level | Master's | |
| thesis.degree.name | MS (Master of Science) |
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