Passivation of type II InAs / GaSb superlattice photodetectors with atomic layer deposited Al2O3

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage83530Z-7en_US
dc.citation.spage83530Z-1en_US
dc.citation.volumeNumber8353en_US
dc.contributor.authorSalihoğlu, Ömeren_US
dc.contributor.authorMuti, Abdullahen_US
dc.contributor.authorKutluer, K.en_US
dc.contributor.authorTansel, T.en_US
dc.contributor.authorTuran, R.en_US
dc.contributor.authorKocabaş, Coşkunen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.coverage.spatialBaltimore, Maryland, United Statesen_US
dc.date.accessioned2016-02-08T12:15:08Z
dc.date.available2016-02-08T12:15:08Z
dc.date.issued2012en_US
dc.departmentDepartment of Physicsen_US
dc.descriptionConference name: SPIE Defense, Security, and Sensing, 2012en_US
dc.descriptionDate of Conference: 23-27 April 2012en_US
dc.description.abstractWe have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free and low operation temperature with uniform coating of ALD technique leads to a conformal and defect free coverage on the side walls. This conformal coverage of rough surfaces also satisfies dangling bonds more efficiently while eliminating metal oxides in a self cleaning process of the Al2O3 layer. Al2O3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 x 1013 Jones, respectively at 4 µm and 77 K. Quantum efficiency (QE) was determined as %41 for these detectors.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:15:08Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2012en
dc.identifier.doi10.1117/12.920406en_US
dc.identifier.isbn9780819490315en_US
dc.identifier.issn0277-786X
dc.identifier.urihttp://hdl.handle.net/11693/28242
dc.language.isoEnglishen_US
dc.publisherSPIEen_US
dc.relation.isversionofhttps://doi.org/10.1117/12.920406en_US
dc.source.titleProceedings of SPIEen_US
dc.subjectSuperlatticeen_US
dc.subjectPhotodetectoren_US
dc.subjectInAs/GaSben_US
dc.subjectAl2O3en_US
dc.subjectALDen_US
dc.subjectPassivationen_US
dc.titlePassivation of type II InAs / GaSb superlattice photodetectors with atomic layer deposited Al2O3en_US
dc.typeConference Paperen_US

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