Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage580en_US
dc.citation.issueNumber3en_US
dc.citation.spage576en_US
dc.citation.volumeNumber51en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorBütün, S.en_US
dc.contributor.authorŞafak, Y.en_US
dc.contributor.authorÇakmak, H.en_US
dc.contributor.authorYu, H.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T09:54:01Z
dc.date.available2016-02-08T09:54:01Z
dc.date.issued2010-10-13en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThe current transport mechanisms in (Ni/Au)-AlN/GaN Schottky barrier diodes (SBDs) were investigated by the use of current-voltage characteristics in the temperature range of 80-380 K. In order to determine the true current transport mechanisms for (Ni/Au)-AlN/GaN SBDs, by taking the Js(tunnel), E 0, and Rs as adjustable fit parameters, the experimental J-V data were fitted to the analytical expressions given for the current transport mechanisms in a wide range of applied biases and at different temperatures. Fitting results show the weak temperature dependent behavior in the saturation current and the temperature independent behavior of the tunneling parameters in this temperature range. Therefore, it has been concluded that the mechanism of charge transport in (Ni/Au)-AlN/GaN SBDs, along the dislocations intersecting the space charge region, is performed by tunneling. In addition, in order to analyze the trapping effects in (Ni/Au)-AlN/GaN SBDs, the capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics were measured in the frequency range 0.7-50 kHz. A detailed analysis of the frequency-dependent capacitance and conductance data was performed, assuming the models in which traps are located at the heterojunction interface. The density (Dt) and time constants (τt) of the trap states have been determined as a function of energy separation from the conduction-band edge (Ec - Et) as Dt≅ (5-8)×10 12eV-1 cm-2andτt≅(43-102) μs, respectively.en_US
dc.identifier.doi10.1016/j.microrel.2010.09.017en_US
dc.identifier.issn0026-2714
dc.identifier.urihttp://hdl.handle.net/11693/21994
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.microrel.2010.09.017en_US
dc.source.titleMicroelectronics Reliabilityen_US
dc.subjectAnalytical expressionsen_US
dc.subjectApplied biasen_US
dc.subjectCapacitance voltageen_US
dc.subjectCharge transporten_US
dc.subjectConduction band edgeen_US
dc.subjectCurrent transport mechanismen_US
dc.subjectEnergy separationsen_US
dc.subjectFit parametersen_US
dc.subjectFitting resultsen_US
dc.subjectFrequency rangesen_US
dc.subjectFrequency-dependent capacitanceen_US
dc.subjectHeterojunction interfacesen_US
dc.subjectSaturation currenten_US
dc.subjectSpace charge regionsen_US
dc.subjectTemperature dependent behavioren_US
dc.subjectTemperature rangeen_US
dc.subjectTime constantsen_US
dc.subjectTrap stateen_US
dc.subjectTrapping effectsen_US
dc.subjectTunneling parameteren_US
dc.subjectCapacitanceen_US
dc.subjectHeterojunctionsen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectCurrent voltage characteristicsen_US
dc.titleCurrent transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodesen_US
dc.typeArticleen_US

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