Resonance broadening and tuning of split ring resonators by top-gated epitaxial graphene on SiC substrate
buir.contributor.author | Özbay, Ekmel | |
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.issueNumber | 18 | en_US |
dc.citation.volumeNumber | 103 | en_US |
dc.contributor.author | Cakmakyapan, S. | en_US |
dc.contributor.author | Sahin, L. | en_US |
dc.contributor.author | Pierini, F. | en_US |
dc.contributor.author | Strupinski, W. | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.date.accessioned | 2016-02-08T09:34:23Z | |
dc.date.available | 2016-02-08T09:34:23Z | |
dc.date.issued | 2013 | en_US |
dc.department | Department of Physics | en_US |
dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.description.abstract | Split ring resonators (SRRs) are subwavelength structures that are able to localize and enhance the electromagnetic wave. Controlling the plasmonic resonance behavior of metallic nanostructures, such as SRRs, plays an important role in optoelectronics and nanophotonics applications. Electrically tunable carrier concentration of graphene provides hybrid devices, where the plasmonic structures and graphene are combined. In this paper, we report the design, fabrication, and measurement of a device comprising a SRR array on epitaxial graphene. We obtained resonance broadening and tuning of split ring resonators by utilizing an epitaxial graphene transistor with transparent top-gate. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T09:34:23Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013 | en |
dc.identifier.doi | 10.1063/1.4828499 | en_US |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://hdl.handle.net/11693/20747 | |
dc.language.iso | English | en_US |
dc.publisher | AIP Publishing LLC | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.4828499 | en_US |
dc.source.title | Applied Physics Letters | en_US |
dc.subject | Electrically tunable | en_US |
dc.subject | Epitaxial graphene | en_US |
dc.subject | Hybrid devices | en_US |
dc.subject | Metallic nanostructure | en_US |
dc.subject | Plasmonic resonances | en_US |
dc.subject | SiC substrates | en_US |
dc.subject | Split ring resonator | en_US |
dc.subject | Sub-wavelength structures | en_US |
dc.subject | Electromagnetic waves | en_US |
dc.subject | Epitaxial growth | en_US |
dc.subject | Graphene | en_US |
dc.subject | Optical resonators | en_US |
dc.subject | Plasmons | en_US |
dc.subject | Resonance | en_US |
dc.subject | Silicon carbide | en_US |
dc.subject | Ring gages | en_US |
dc.title | Resonance broadening and tuning of split ring resonators by top-gated epitaxial graphene on SiC substrate | en_US |
dc.type | Article | en_US |
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