GaN-on-SiC LNA for UHF and L-Band

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buir.contributor.authorZafar, Salahuddin
buir.contributor.authorOsmanoğlu, Sinan
buir.contributor.authorÇankaya, Büşra
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage98en_US
dc.citation.spage95en_US
dc.contributor.authorZafar, Salahuddinen_US
dc.contributor.authorOsmanoğlu, Sinanen_US
dc.contributor.authorÇankaya, Büşraen_US
dc.contributor.authorKashif, A.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialPrague, Czech Republicen_US
dc.date.accessioned2020-01-24T06:47:10Z
dc.date.available2020-01-24T06:47:10Z
dc.date.issued2019
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionDate of Conference: 13-15 May 2019en_US
dc.descriptionConference name:European Microwave Conference in Central Europe (EuMCE), Proceedings of the 1st European Microwave Conference in Central Europeen_US
dc.description.abstractIn this paper, we report a broadband GaN HEMT LNA from 100 MHz to 2 GHz, using common source with inductive degeneration and RC feedback topology. Flat gain response of ±1.5 dB variation for 9 V drain voltage with 108 mA drain current bias is achieved. Noise characteristics for frequencies as low as 100 MHz have been explored for the first time for GaN-on-SiC technology. A gain greater than 8 dB with single stage, and promising values of input reflection coefficient (smaller than -8.9 dB) and output reflection coefficient (smaller than -7.1 dB) have been achieved, respectively. Minimum NF of 2.9 dB is achieved while an NF smaller than 5 dB is reported in the usable frequency range from 310 MHz to 2 GHz. Performance evaluation is also done for both low and high drain current and voltage values. In-house 0.15 μm GaN-on-SiC process is used to design this MMIC. The chip size for designed MMIC is 1.35 mm × 1.35 mm.en_US
dc.identifier.isbn9782874870675
dc.identifier.urihttp://hdl.handle.net/11693/52794
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.source.title2019 European Microwave Conference in Central Europe (EuMCE)en_US
dc.subjectBroadbanden_US
dc.subjectFlat gainen_US
dc.subjectLow-noise amplifieren_US
dc.subjectUHFen_US
dc.subjectL-banden_US
dc.subjectGallium nitrideen_US
dc.subjectHEMTen_US
dc.subjectSiCen_US
dc.titleGaN-on-SiC LNA for UHF and L-Banden_US
dc.typeConference Paperen_US

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