In-situ focused ion beam implantation for the fabrication of a hot electron transistor oscillator structure

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dc.citation.epage138en_US
dc.citation.issueNumber1en_US
dc.citation.spage135en_US
dc.citation.volumeNumber11en_US
dc.contributor.authorKaya I.I.en_US
dc.contributor.authorDellow, M.W.en_US
dc.contributor.authorBending, S.J.en_US
dc.contributor.authorLinfield, E.H.en_US
dc.contributor.authorRose P.D.en_US
dc.contributor.authorRitchie, D.A.en_US
dc.contributor.authorJones G.A.C.en_US
dc.date.accessioned2016-02-08T10:51:18Z
dc.date.available2016-02-08T10:51:18Z
dc.date.issued1996en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractRecent advances using in situ focused ion beam implantation during an MBE growth interruption have been exploited to fabricate planar GaAs hot electron structures without the need for shallow ohmic contacts. This novel fabrication route shows a very high yield and has been used to demonstrate a prototype high-frequency oscillator structure based on electron multiplication in the base layer. Existing devices show transfer factors in excess of unity as well as reversal of the base current at high injection levels, which are the prerequisites for oscillator action. Future improvements in device design are discussed.en_US
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/25850
dc.language.isoEnglishen_US
dc.source.titleSemiconductor Science and Technologyen_US
dc.subjectElectric currentsen_US
dc.subjectFabricationen_US
dc.subjectHot carriersen_US
dc.subjectIn situ processingen_US
dc.subjectIon beamsen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectOhmic contactsen_US
dc.subjectOscillators (electronic)en_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectSemiconductor device structuresen_US
dc.subjectTransistorsen_US
dc.subjectHot electron structureen_US
dc.subjectHot electron transistor oscillatoren_US
dc.subjectIon beam implantationen_US
dc.subjectIon implantationen_US
dc.titleIn-situ focused ion beam implantation for the fabrication of a hot electron transistor oscillator structureen_US
dc.typeArticleen_US

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