Microstructural analysis with graded and non-graded indium in InGaN solar cell

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage117en_US
dc.citation.issueNumber2en_US
dc.citation.spage109en_US
dc.citation.volumeNumber12en_US
dc.contributor.authorDurukan, I. K.en_US
dc.contributor.authorÖztürk, M. K.en_US
dc.contributor.authorÇörekçi, S.en_US
dc.contributor.authorTamer, M.en_US
dc.contributor.authorBaş, Y.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2018-04-12T11:01:41Z
dc.date.available2018-04-12T11:01:41Z
dc.date.issued2017en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractIn this study are graded and non graded InGaN/GaN samples grown on c-oriented sapphire substrate using the Metal Organic Chemical Vapour Deposition (MOCVD) technique. The structural and morphological properties of the grown InGaN/GaN solar cell structures are analyzed using High Resolution X-ray Diffraction (HRXRD), atomic force microscopy (AFM). Each structures c and a lattice parameters strain, biaxial strain, hydrostatic strain, stress, lattice relax, tilt angle, mosaic crystal size, dislocation densities of GaN and InGaN layers are determined by XRD measurements. In accordance with these calculations, the effect of graded structure on the defects, are discussed. As a dramatic result; although values of full width at half maximum (FWHM) are broad, a considerable decrease at dislocations is noticed. The AFM observations have revealed that the two dimensional growth of the graded sample is more significant and its roughness value is lower. JV measurements shown that the performance of the graded structure is higher. It is determined that all test results are consistent with each other.en_US
dc.description.provenanceMade available in DSpace on 2018-04-12T11:01:41Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2017en
dc.identifier.doi10.1166/jno.2017.1973en_US
dc.identifier.issn1555-130X
dc.identifier.urihttp://hdl.handle.net/11693/37062
dc.language.isoEnglishen_US
dc.publisherAmerican Scientific Publishersen_US
dc.relation.isversionofhttps://doi.org/10.1166/jno.2017.1973en_US
dc.source.titleJournal of Nanoelectronics and Optoelectronicsen_US
dc.subjectAFMen_US
dc.subjectHRXRDen_US
dc.subjectInGaN/GaN solar cellen_US
dc.subjectMOCVDen_US
dc.titleMicrostructural analysis with graded and non-graded indium in InGaN solar cellen_US
dc.typeArticleen_US

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