High power gain for stimulated Raman amplification in CuAlS2

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage5569en_US
dc.citation.issueNumber10en_US
dc.citation.spage5564en_US
dc.citation.volumeNumber80en_US
dc.contributor.authorBairamov, B. H.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorBodnar', I. V.en_US
dc.contributor.authorRud', Yu. V.en_US
dc.contributor.authorNogoduyko, V. K.en_US
dc.contributor.authorToporov, V. V.en_US
dc.date.accessioned2018-04-12T13:50:16Z
dc.date.available2018-04-12T13:50:16Z
dc.date.issued1996en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe spontaneous Raman spectra of the chalcopyrite structure crystal CuAlS2, which is promising for nonlinear optical applications, has been investigated at 8 and 300 K. The main aim of this study is to compare the absolute spontaneous Raman scattering efficiency in CuAlS2 crystals with that of their isomorphous analog, zinc-blende structure GaP crystals, known as one of the most efficient materials for Raman amplification. Observation of a high value of absolute scattering efficiency S/L dΩ (where S is the fraction of incident power that scatters into the solid angle d Ω and L is the optical path length with S/L dΩ=9.5×10-5 cm-1 sr-1), together with relatively narrow linewidth (Γ=5.1 cm-1, full width at half maximum at room temperature and Γ=1.5 cm-1 at 8 K for the strongest Γ1 phonon mode of CuAlS2 at 314 cm-1) indicate that CuAlS2 has the highest value of the stimulated Raman gain coefficient gs/I where I is the incident laser power density. The calculated value of this gain is gs/I=2.1×10-6 cm-1/W at 300 K and 5.0×10-6 cm/W, at 8 K for 514.5 nm laser excitation, and is larger than those for the appropriate vibrational modes of various materials (including GaP, LiNbO3, Ba2NbO5O15, CS2, and H2) investigated so far. The calculations show that cw Raman oscillator operation in CuAlS2 is feasible with low power threshold of pump laser. © 1996 American Institute of Physics.en_US
dc.description.provenanceMade available in DSpace on 2018-04-12T13:50:16Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 1996en
dc.identifier.doi10.1063/1.363820en_US
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11693/38183
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.363820en_US
dc.source.titleJournal of Applied Physicsen_US
dc.titleHigh power gain for stimulated Raman amplification in CuAlS2en_US
dc.typeReviewen_US

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